Zobrazeno 1 - 10
of 129
pro vyhledávání: '"R. Hiskes"'
Autor:
Thirumalai Venkatesan, Lesley F. Cohen, Judith L. MacManus-Driscoll, A.K.M. Akther Hossain, P. S. I. P. N. de Silva, K. A. Thomas, R. Hiskes, M. Rajeswari
Publikováno v:
Journal of Applied Physics. 84:3939-3948
A La0.7Ca0.3MnO3 thin film made by pulsed laser deposition (PLD) and another film of the same composition made by metal organic chemical vapor deposition (MOCVD), both on single crystal LaAlO3, were subject to a series of six, short, controlled annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5a1a54f70f4d25955a0a27199265dba
https://doi.org/10.1063/1.368572
https://doi.org/10.1063/1.368572
Autor:
C. M. Foster, T. Hidaka, R. Hiskes, I. Sakai, T. Maruyama, S.A. DiCarolis, L. A. Wills, Jun Amano, M. Saitoh
Publikováno v:
Integrated Ferroelectrics. 17:319-327
Ferroelectric thin films as the recording media of scanning probe microscope-based storage devices were investigated using an atomic force microscope(AFM) technique. Polarization domains were formed in the PbZrxTi1-xO3(PZT) thin films epitaxialy grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::408dbd98448109b16e2e3861b7de16d1
https://doi.org/10.1080/10584589708013006
https://doi.org/10.1080/10584589708013006
Local structure, transport, and rare-earth magnetismin the ferrimagnetic perovskiteGd0.67Ca0.33MnO3s
Autor:
Corwin H. Booth, G. Jeffrey Snyder, R. Hiskes, T. H. Geballe, M. R. Beasley, S.A. DiCarolis, Frank Bridges
Publikováno v:
Physical Review B. 55:6453-6459
Bulk, single crystal, and metal-organic chemical-vapor deposition thin-film samples of ${\mathrm{Gd}}_{0.67}$ ${\mathrm{Ca}}_{0.33}$ ${\mathrm{MnO}}_{3}$ were prepared and examined for their electrical, magnetic, and structural properties. ${\mathrm{
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27133d734601edd08eaa288ae258d92e
https://doi.org/10.1103/physrevb.55.6453
https://doi.org/10.1103/physrevb.55.6453
Autor:
T. H. Geballe, R. Hiskes, M. R. Beasley, S.A. DiCarolis, G. Jeffrey Snyder, Daniel C. Worledge
Publikováno v:
Journal of Applied Physics. 80:5158-5161
Resistivity measurements on a La0.67Ca0.33MnO3 film are reported for a series of argon anneals at successively higher temperatures. Tc, the ferromagnetic ordering temperature, increases uniformly with increasing annealing temperature and annealing ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::312bd6a381b58f0229fb59ca1f44d044
https://doi.org/10.1063/1.363498
https://doi.org/10.1063/1.363498
Publikováno v:
Physical Review B. 53:14434-14444
An investigation designed to display the intrinsic properties of perovskite manganites was accomplished by comparing the behavior of bulk samples with that of thin films. Epitaxial 1500 \AA{} films of perovskite ${\mathrm{La}}_{0.67}$${\mathrm{Ca}}_{
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f748a788df1b067a42db30c31dc64fe
https://doi.org/10.1103/physrevb.53.14434
https://doi.org/10.1103/physrevb.53.14434
Publikováno v:
Journal of Crystal Growth. 156:227-234
(100)-oriented, cerium oxide epitaxial thin films, approximately 250 A thick, were grown on r-plane sapphire substrates using a solid source MOCVD technique. Rocking curve FWHM values as low as 0.63° and AFM surface roughness on the order of 5 A RMS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a16092730d0fe74a4d4f8c6f3c1b3d05
https://doi.org/10.1016/0022-0248(95)00253-7
https://doi.org/10.1016/0022-0248(95)00253-7
Autor:
G. R. Bai, Duane Dimos, Husam N. Alshareef, Roseann Csencsits, Z. Li, C. M. Foster, R. Hiskes, L. A. Wills
Publikováno v:
Integrated Ferroelectrics. 10:31-38
Epitaxial SrRuO3 thin films were deposited on SrTiO3 (100) substrates by RF sputtering for use as bottom electrodes and epitaxial buffer layers. On these conductive substrates, epitaxial Pb(Zr0.35Ti0.65)O3 (PZT) thin films were deposited by metalorga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f73908c1b5e06e7b92ab953c9c7f4757
https://doi.org/10.1080/10584589508012261
https://doi.org/10.1080/10584589508012261
Autor:
R. Hiskes, Roger K. Route, Robert S. Feigelson, S.A. DiCarolis, Z. Lu, J.E. Fouquet, F. Leplingard
Publikováno v:
Journal of Materials Research. 9:2258-2263
C-axis LiNbO3 epitaxial films have been grown on c-plane sapphire substrates by solid source metal-organic chemical vapor deposition (MOCVD) using the tetramethylheptanedionate sources, Li(thd) and Nb(thd)4. Stoichiometric LiNbO3 films were deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e4a7a82a00248931eee88ff0b2a4bb9
https://doi.org/10.1557/jmr.1994.2258
https://doi.org/10.1557/jmr.1994.2258
Publikováno v:
Journal of Crystal Growth. 128:788-792
A novel solid source metalorganic chemical vapor deposition (MOCVD) process has been used to grow highly textured thin films of CeO2 and MgO, and highly oriented thin films of Sr1-xBaxNb206 (SBN). Both (100)-oriented and (lll)-oriented CeO2 films wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7a04041a488ffe8478042ac96afc533
https://doi.org/10.1016/s0022-0248(07)80045-5
https://doi.org/10.1016/s0022-0248(07)80045-5
Autor:
R. Hiskes, Z. Lu, Roger K. Route, Robert S. Feigelson, S.A. DiCarolis, J. L. Young, R. D. Jacowitz
Publikováno v:
Journal of Crystal Growth. 128:781-787
A novel and inexpensive single source metalorganic chemical vapor deposition (MOCVD) reactor has been developed at Hewlett Packard Laboratories, which permits the controlled and reproducible growth of device quality thin film heterostructures on a va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b18067096e2150a0e24d7adda7561ad
https://doi.org/10.1016/s0022-0248(07)80044-3
https://doi.org/10.1016/s0022-0248(07)80044-3