Zobrazeno 1 - 10
of 43
pro vyhledávání: '"R. Hasumi"'
Publikováno v:
IEEE transactions on electromagnetic compatibility. 49(2):263-269
A simultaneous measurement method using a parallel modulated probe array is proposed to measure the electromagnetic field radiated by antennas at different locations simultaneously. Each modulated probe is excited by a local signal with different fre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b34aafd9e696fcebbc8788653afece63
http://hdl.handle.net/10097/35782
http://hdl.handle.net/10097/35782
Autor:
Hirofumi Yamashita, H. Ootani, R. Hasumi, K. Honda, Yoshiaki Toyoshima, K. Eda, A. Mochizuki, Tatsuya Ohguro, Yoshitaka Egawa, T. Asami, Hiroki Sasaki, Hisayo Momose, Y. Sugiura
Publikováno v:
SPIE Proceedings.
Back Side Illumination (BSI) CMOS image sensors with two-layer photo detectors (2LPDs) have been fabricated and evaluated. The test pixel array has green pixels (2.2um x 2.2um) and a magenta pixel (2.2um x 4.4um). The green pixel has a single-layer p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::780f4d788585f6b24cd308ca1fda0376
https://doi.org/10.1117/12.2077122
https://doi.org/10.1117/12.2077122
Autor:
R. Hasumi, James M. Williamson, Atsushi Nakajima, Koji Kaya, Terry A. Miller, Christopher C. Carter, H. Watanabe, M. Hirano
Publikováno v:
The Journal of Physical Chemistry A. 101:392-398
The geometric structures of 7-azaindole−water complexes, (7-AzI)-(H2O)n (n = 1−3), and 7-AzI dimer were investigated by laser-induced fluorescence (LIF) spectroscopy with high resolution (∼0.01 cm-1). For the 7-AzI−(H2O)n complexes (n = 1−3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c80f2c167701da85314bd6f4724f1f15
https://doi.org/10.1021/jp9614411
https://doi.org/10.1021/jp9614411
Publikováno v:
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
3D TCAD analysis of blooming for 1.4 μm CMOS image sensor (CIS) with two-shared pixel structure has been performed. Its blooming behavior has been modeled and clear design guidelines for potential control inside CIS pixels have been obtained.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70a63f6497dfb297e4436b86b83ede4b
https://doi.org/10.1109/sispad.2013.6650659
https://doi.org/10.1109/sispad.2013.6650659
Autor:
J. Pape, Nam-Sung Kim, Martin Ostermayr, Deleep R. Nair, Melanie J. Sherony, Craig S. Lage, Jaeger Daniel, Franck Arnaud, Y. Gao, Deok-Hyung Lee, H.S. Yang, C. Schiller, X. Chen, S. Stiffler, An L. Steegen, Kenneth J. Stein, J. Sudijono, Christopher V. Baiocco, Haoren Zhuang, Robert C. Wong, Y. Takasu, Ho-Kyu Kang, Sayeed A. Badrudduza, J. Wallner, Laegu Kang, James Chingwei Li, Aaron Thean, Y.W. Teh, L. Zhuang, R. Hasumi, S. Samavedam, D.P. Sun, Mukesh Khare
Publikováno v:
2008 IEEE International Electron Devices Meeting.
This paper describes SRAM scaling for 32 nm low power bulk technology, enabled by high-K metal gate process, down to 0.149 mum2 and 0.124 mum2. SRAM access stability and write margin are significantly improved through a 50% Vt mismatch reduction, tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcc347a597544ead57bce41996b65ef0
https://doi.org/10.1109/iedm.2008.4796660
https://doi.org/10.1109/iedm.2008.4796660
Autor:
R. Hasumi, Mariko Takayanagi, K. Fogel, Haizhou Yin, M. Biscardi, Masafumi Hamaguchi, Henry K. Utomo, H. Kang, James Chingwei Li, Kazuya Ohuchi, Paul Ronsheim, Kazunari Ishimaru, R. Zhang, Z. Zhu, D.-G. Park, Anthony G. Domenicucci, Katherine L. Saenger, Chun-Yung Sung, Ghavam G. Shahidi, Ryosuke Iijima, D. K. Sadana, Y. Takasu, Nivo Rovedo, J. P. de Souza, John A. Ott
Publikováno v:
2008 Symposium on VLSI Technology.
Twisted direct silicon bonded (DSB) substrate demonstrates a higher hole mobility advantage over (110) bulk substrate for PFET. The mobility shows a (110) layer thickness dependence with the thinner DSB layer having a higher hole mobility. 25% on-cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ae78d3b3cef6c89e93c87d622908020
https://doi.org/10.1109/vlsit.2008.4588609
https://doi.org/10.1109/vlsit.2008.4588609
Autor:
Dae-Gyu Park, T.H. Ning, Kazuya Ohuchi, Haizhou Yin, Katherine L. Saenger, Richard L. Kleinhenz, Masafumi Hamaguchi, Devendra K. Sadana, Kazunari Ishimaru, Nivo Rovedo, J. Cai, K. Fogel, Chun-Yung Sung, Gerd Pfeiffer, X. Chen, R. Zhang, Z. Luo, Mariko Takayanagi, John A. Ott, R. Hasumi, Ghavam G. Shahidi
Publikováno v:
2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
End-of-range (EOR) defects generated during the crystal orientation conversion process in DSB technology can give rise to various types of junction leakage depending on their locations relative to device structures. A wide range of EOR defect depths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40a186efb97b78b7c46c2a3da321bcb7
https://doi.org/10.1109/vtsa.2008.4530786
https://doi.org/10.1109/vtsa.2008.4530786
Autor:
K. Fogel, Haizhou Yin, X. Chen, R. Klemhenz, Z. Luo, James Chingwei Li, Mukesh Khare, K. Ohuchr, Kenneth J. Stein, Mariko Takayanagi, Thomas A. Wallner, R. Zhang, John A. Ott, R. Hasumi, Gerd Pfeiffer, Katherine L. Saenger, R. Bendernagel, S. Crowder, Ghavam G. Shahidi, M. Hamaguchr, Chun-Yung Sung, D. K. Sadana, Nivo Rovedo, H. Ng, Kazunari Ishimaru, D.-G. Park
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
When DSB bonding interface falls into highly doped S/D direct silicon bonded (DSB) technology is shown to be scalable regions, there are concerns of high S/D leakage (due to the possible for 32 nm node and beyond for two integration schemes: solid ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88ed7eda5f706c91c642f1899568739b
https://doi.org/10.1109/vlsit.2007.4339701
https://doi.org/10.1109/vlsit.2007.4339701
Autor:
Junji Koga, Yoshio Nishi, Takashi Kinoshita, A. Kinoshita, Ken Uchida, S. Toriyama, R. Hasumi
Publikováno v:
2006 International Electron Devices Meeting.
The carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, vinj. It was found that vinj enhancement associated with the velocity overshoot enhances the curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::077a874a14f8335836d59982ef4d9410
https://doi.org/10.1109/iedm.2006.346963
https://doi.org/10.1109/iedm.2006.346963
Autor:
Katsura Miyashita, Takashi Kinoshita, Yoshiaki Toyoshima, T. Komoda, A. Kinoshita, K. Adachi, R. Hasumi, Fumiyoshi Matsuoka, Junji Koga, S. Yamada, Masafumi Hamaguchi, T. Nakayama
Publikováno v:
2006 International Electron Devices Meeting.
Ultra low power circuit operation is demonstrated with dopant segregated Schottky (DSS) source/drain transistors for the first time. DSS greatly improves propagation delay in multiple fan-in NAND gates at constant standby current. The delay is enhanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::250f0eb2c7abd496f8730e9e65bc6907
https://doi.org/10.1109/iedm.2006.346961
https://doi.org/10.1109/iedm.2006.346961