Zobrazeno 1 - 10
of 123
pro vyhledávání: '"R. Harboe-Sorensen"'
Publikováno v:
2022 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with 2022 NSREC).
Publikováno v:
IEEE Transactions on Nuclear Science. 50:2322-2327
For space applications, can cost-effective and reliable heavy ion single-event effect (SEE) testing still be carried out on commercially available, plastic packaged, high-density memories? Their complexity, architecture, and packaging assemblies as w
Autor:
K. Gruermann, Fritz Gliem, P. Mathijs, D. Walter, R. Harboe Sorensen, H. Schmidt, K. Puimege, Christian Poivey, D. Gerrits, A. Keating, M. D'Alessio, N. Fleurinck
Publikováno v:
2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Publikováno v:
IEEE Transactions on Nuclear Science. 43:2767-2771
Unit level proton irradiation as a tool to debug low cost space experiment design and component selection has been shown to give excellent agreement with in-orbit anomalies. The procedures used and experimental results obtained are reported together
Autor:
L. Adams, C. Claeys, Jan Vanhellemont, R. Harboe-Sorensen, A. Kaniava, M.-A. Trauwaert, P. Clauws, B. Johlander, Eddy Simoen
Publikováno v:
IEEE Transactions on Nuclear Science. 41:479-486
The generation and annihilation of deep levels in diodes fabricated on nand p-type floating zone and Czochralski silicon substrates is discussed as a function of the substrate parameters and the irradiation and thermal annealing conditions. Both low
Autor:
R. Harboe-Sorensen
Publikováno v:
Radiation Physics and Chemistry. 43:165-174
The best way of assessing semiconductor susceptibility to Single Event Phenomena (SEP) would be to measure their response while operating in the actual space environment. However, this a very expensive way to characterise semiconductors and has only
Autor:
G. Cellere, A. Visconti, M. Murat, Alessandro Paccagnella, A. Akkerman, Ari Virtanen, M. Bonanomi, R. Harboe-Sorensen, J. Barak
Swift heavy ions impacting on matter lose energy through the creation of dense tracks of charges. The study of the space and time evolution of energy exchange allows understanding the single event effects behavior in advanced microelectronic devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76a54409cf8c8e7b29a44b717ea792a6
http://hdl.handle.net/11577/2963301
http://hdl.handle.net/11577/2963301
Autor:
Ch. Poivey, T. Beutier, R. Harboe Sorensen, Marcus H. Mendenhall, C. Binois, Daniel Peyre, G. Salvaterra, G. Montay, R. Mangeret, M. Beaumel, Robert A. Weller
Publikováno v:
2009 European Conference on Radiation and Its Effects on Components and Systems.
Proton irradiations were performed on three types of optocouplers at three energies 60 MeV, 100 MeV and 200 MeV, followed by a TID irradiation up to 75 kRAD. GEANT4 allowed the calculation of the fluences needed to induce the same NIEL. As a prelimin
Autor:
Ali Zadeh, R. Harboe Sorensen, J. Perdigues Armengol, O. Navasquillo, S. De La Rosa, J. Blasco, Christian Poivey
Publikováno v:
2009 IEEE Radiation Effects Data Workshop.
We present radiation data, Total Ionizing Dose, Displacement Damage Dose and proton induced Single Event Effects, on the DAS Photonics SIOS optical link transceiver. These tests have been performed for a radiation prescreening helping for the selecti
Autor:
J. Vetter, J. Dreute, R. Harboe Sorensen, A. Noll, O. Geschke, H. Röcher, B. Wiegel, W. Heinrich, L. Adams, S.E. Hirzebruch
Publikováno v:
International Journal of Radiation Applications and Instrumentation. Part D. Nuclear Tracks and Radiation Measurements. 19:891-894
We started a research program using heavy ion beams at the GSI Darmstadt accelerator to investigate radiation effects of heavy ions in microelectronic devices. The understanding of these radiation effects is of particular importance to estimate the r