Zobrazeno 1 - 5
of 5
pro vyhledávání: '"R. Hachino"'
Autor:
T. Sagara, T. Kikutani, Hiroaki Narisawa, Nobumichi Okazaki, Masanori Hosomi, W. Ohtsuka, H. Mori, M. Motoyoshi, M. Nakamura, M. Watanabe, C. Fukamoto, I. Yamamura, K. Moriyama, Hajime Yamagishi, M. Shouji, Kaori Tai, H. Yamada, Kazuhiro Bessho, Hiroshi Kano, R. Hachino
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
In this paper, we study to reduce the switching dispersion and improve 0/1 separation of Magnetic Tunnel Junction (MTJ) elements in order to realize high density MRAM. Various kinds of MTJ sizes and shapes have been evaluated and conclude that in ell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c38f7d71bf04212052b563dadb4c78fe
https://doi.org/10.1109/vlsit.2004.1345370
https://doi.org/10.1109/vlsit.2004.1345370
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems; Nov2012, Vol. 20 Issue 11, p2020-2030, 11p
Autor:
LI, HAI (HELEN), SUN, ZHENYU
Publikováno v:
SPIN (2010-3247); Sep2012, Vol. 2 Issue 3, p-1, 9p
Autor:
Dorrance, Richard, Ren, Fengbo, Toriyama, Yuta, Hafez, Amr Amin, Yang, Chih-Kong Ken, Markovic, Dejan
Publikováno v:
IEEE Transactions on Electron Devices; Apr2012, Vol. 59 Issue 4, p878-887, 10p
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems; 12/01/2010, Vol. 18 Issue 12, p1724-1734, 11p