Zobrazeno 1 - 10
of 52
pro vyhledávání: '"R. H. Mathews"'
Autor:
L.J. Mahoney, R. H. Mathews, C.L. Chen, J.P. Sage, T.C.L.G. Sollner, P.A. Maki, C. D. Parker, S.D. Calawa, K.M. Molvar
Publikováno v:
Solid-State Electronics. 44:1853-1856
Monolithic resonant-tunneling-diode (RTD) relaxation oscillators are fabricated. The highest repetition rate of this pulse generator is 6.7 GHz with a pulse width of approximately 60 ps. Oscillators with an RTD connected to an off-chip transmission l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9686fd960b2b7471f406b381909031
https://doi.org/10.1016/s0038-1101(00)00105-2
https://doi.org/10.1016/s0038-1101(00)00105-2
Autor:
Chang-Lee Chen, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner, R. H. Mathews, L.J. Mahoney, K.M. Molvar
Publikováno v:
Proceedings of the IEEE. 87:596-605
We describe a new family of clocked logic gates based on the resonant-tunneling diode (RTD). Pairs of RTDs form storage latches, and these are connected by networks consisting of field-effect transistors (FETs), saturated resistors, and RTDs. The des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8090256068af36d5a5bac06230ad3d31
https://doi.org/10.1109/5.752517
https://doi.org/10.1109/5.752517
Autor:
R. H. Mathews, C. L. Chen, L.J. Mahoney, K.M. Molvar, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner
Publikováno v:
Applied Physics Letters. 74:4058-4060
Device-quality layers were regrown on GaAs wafers by molecular-beam epitaxy over conductive pregrown areas and on selectively patterned high-resistivity areas formed by oxygen implantation. The regrowth over both areas resulted in comparable device-q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64218fce0171f8839718210432977745
https://doi.org/10.1063/1.123260
https://doi.org/10.1063/1.123260
Autor:
L.J. Mahoney, R. H. Mathews, C.L. Chen, K.M. Molvar, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner
Publikováno v:
IEEE Electron Device Letters. 19:478-480
A novel technique of integrating resonant-tunneling diodes (RTDs) with pseudomorphic high-electron-mobility transistors (pHEMTs) is demonstrated. A proton was implanted through the pHEMT layers to convert the RTD structure underneath to a high-resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c34596481460acae86dd6b559225ff9
https://doi.org/10.1109/55.735752
https://doi.org/10.1109/55.735752
Autor:
C.L. Chen, L.J. Mahoney, G.L. Fitch, J.P. Sage, T.C.L.G. Sollner, K.M. Molvar, R. H. Mathews, P.A. Maki
Publikováno v:
IEEE Electron Device Letters. 18:489-491
Resonant-tunneling diodes (RTDs) with a new planar configuration have been fabricated with a new self-aligned process that is compatible with that of silicon integrated-circuits technology. The size of the RTD is determined by a shallow boron implant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4a1fb8fdc8d0dbdad587b5f9a7c3dcb
https://doi.org/10.1109/55.624927
https://doi.org/10.1109/55.624927
Publikováno v:
Laser Processing: Surface Treatment and Film Deposition ISBN: 9789401065726
Recent improvements in the laser direct write technology are reviewed with particular emphasis on new applications for micromechanics and advanced electronic packaging. The laser stereo etching method has been scaled so as to permit the accurate thre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db0143210939f6caa3cf224c3e37709d
https://doi.org/10.1007/978-94-009-0197-1_49
https://doi.org/10.1007/978-94-009-0197-1_49
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3294
Laser direct write deposition and etching have been developed for uses on multichip modules. Instrumentation has been demonstrated for these and other applications on substrates with significant three‐dimensional topography.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::944d39b4184efe13844a1ca696e83588
https://doi.org/10.1116/1.587615
https://doi.org/10.1116/1.587615
Autor:
P. E. Tannenwald, R. H. Mathews, T.C.L.G. Sollner, H. R. Fetterman, C. D. Parker, P. T. Parrish
Publikováno v:
Electromagnetics. 3:209-215
Planar antenna arrays have been developed at 140 GHz using twin-dipole elements. The initial systems have been fabricated using a hybrid approach with beam lead Schottky GaAs diodes mounted on quartz substrates. Heterodyne measurements of subelement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::807d1f386677a1728fb7985622f990a8
https://doi.org/10.1080/02726348308915184
https://doi.org/10.1080/02726348308915184
Autor:
R. H. Mathews
Publikováno v:
American Anthropologist. 2:494-501
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e65dc8c02efa4b5aeae7b4fa31ba71f4
https://doi.org/10.1525/aa.1900.2.3.02a00050
https://doi.org/10.1525/aa.1900.2.3.02a00050
Autor:
R. H. Mathews
Publikováno v:
American Anthropologist. 10:281-285
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::514b3f47aeb9e21fa9274f76260e308b
https://doi.org/10.1525/aa.1908.10.2.02a00110
https://doi.org/10.1525/aa.1908.10.2.02a00110