Zobrazeno 1 - 3
of 3
pro vyhledávání: '"R. H. Herlocher"'
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
MOSFET threshold voltage (VT) is the most important parameter governing sub-0.25 μm MOS device operation. Critical device performance issues such as speed, off state current and active power depend on VT (1). The primary components that influence VT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5111f45b0448f2604ad90be70fa0eb6e
https://doi.org/10.1063/1.56802
https://doi.org/10.1063/1.56802
Autor:
Robert J. Hillard, Robert G. Mazur, L. E. Peitersen, Richard Conti, R. H. Herlocher, G. A. Gruber
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
This paper reports the use of a mercury probe with a highly repeatable contact area to monitor the effects of plasma damage on a gate oxide resulting from a PECVD process. The advantage of the mercury probe is that no processing is required to form t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d38c00532bda60fa067cd47a4cb61171
https://doi.org/10.1063/1.56907
https://doi.org/10.1063/1.56907
Autor:
J.R. Easoz, R. H. Herlocher
This report examines the cost-effective manufacture of dendritic-web-based photovoltaic modules. It explains how process changes can increase production and reduce manufacturing costs. Long-range benefits of these improved processes are also discusse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc1830ecaef64d65c05e31f5762c3591
https://doi.org/10.2172/5993455
https://doi.org/10.2172/5993455
