Zobrazeno 1 - 5
of 5
pro vyhledávání: '"R. Gotzfried"'
Autor:
J. Albers, A. Schuppen, R. Gotzfried, H. Dietrich, K.-H. Bach, U. Seiler, F. Beisswanger, S. Gerlach
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:661-668
We report on design aspects and the implementation of RF integrated circuits (RFIC's) using TEMIC's SiGe heterojunction bipolar transistor (HBT) technology. SiGe HBT's with 50-GHz f/sub T/ and f/sub max/ were obtained by a production process includin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9ea5d10de5fb3644b4e307b4632ffcd
https://doi.org/10.1109/22.668679
https://doi.org/10.1109/22.668679
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:1417-1422
We report on design aspects and the implementation of radio-frequency integrated circuits using TEMIC's SiGe technology. The differences between the device parameters of silicon bipolar junction transistor and silicon germanium heterojunction bipolar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58fb288778abdfc5d36d33730b101eb2
https://doi.org/10.1109/4.711341
https://doi.org/10.1109/4.711341
Autor:
R. Gotzfried, M. Bopp, M. Siegle, M. Alles, M. Arens, R. Reimann, J. Zieschang, B. Roos, M. Kocks, S. Gerlach, D. Eichel, G. Krimmer, F. Gruson
Publikováno v:
1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).
A fully-integrated RF-transceiver for DECT comprises two bipolar ICs including power amplifier, low-noise amplifier and VCO. Nonblind-slot and multi-slot capability is achieved by closed-loop modulation. The complete transceiver, which operates from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38f04a174828288be8ad6149a58cfc60
https://doi.org/10.1109/isscc.1999.759104
https://doi.org/10.1109/isscc.1999.759104
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
Design and performance of a new transmit/receive (T/R) antenna switch for mobile communication systems at 1.8 GHz using Si/SiGe Heterojunction Bipolar Transistors (HBT) are described. The switch is designed to be a part of a transceiver front end for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1537d2844a32977b37666956bdf8d667
https://doi.org/10.1109/mwsym.1996.511024
https://doi.org/10.1109/mwsym.1996.511024
Autor:
R. Gotzfried, Hermann Schumacher, H. Hohnemann, S. Gerlach, A. Schuppen, U. Seller, J. Arndt, U. Erben, H. Dietrich
Publikováno v:
Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting.
SiGe-HBTs offer the opportunity to build integrated front-ends for mobile communication systems above 1 GHz. SiGe-HBTs with 50 GHz f/sub T/ and f/sub max/ were obtained by a production process including poly-silicon resistors, nitride capacitors and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb12ef3db1ce1a3ba61372dfb10662a8
https://doi.org/10.1109/bipol.1996.554626
https://doi.org/10.1109/bipol.1996.554626