Zobrazeno 1 - 10
of 24
pro vyhledávání: '"R. Ghin"'
Publikováno v:
IEEE Transactions on Electron Devices. 50:2027-2031
The temperature dependence of electron and hole impact ionization in gallium arsenide (GaAs) has been determined from photomultiplication measurements at temperatures between 20 K and 500 K. It is found that impact ionization is suppressed by increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15b32b3c0efd6187e3cab291e48f1f43
https://doi.org/10.1109/ted.2003.816918
https://doi.org/10.1109/ted.2003.816918
Publikováno v:
Semiconductor Science and Technology. 18:803-806
Electron-initiated avalanche gain and excess noise were measured in In0.48Ga0.52P p+in+ diodes, with avalanche region widths varying from 1 µm down to 0.1 µm, and also in a p+n+ diode. Hole-initiated gain is also measured in some diodes. We find th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91226422c7c31384e53988dd00eb026d
https://doi.org/10.1088/0268-1242/18/8/314
https://doi.org/10.1088/0268-1242/18/8/314
Publikováno v:
Semiconductor Science and Technology. 14:994-1000
We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk AlxGa1-xAs and also submicron p+in+ diodes for x40%. The calculated impact ionization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e16507b629ad489f24b94916122703ce
https://doi.org/10.1088/0268-1242/14/11/309
https://doi.org/10.1088/0268-1242/14/11/309
Publikováno v:
IEEE Transactions on Electron Devices. 45:2096-2101
The electron and hole photomultiplication characteristics M, and M/sub h/ have been measured in a series of Ga/sub 0.52/In/sub 0.4x/P devices with high field regions ranging from 2.0 /spl mu/m down to the depletion width of a heavily doped p-n juncti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf387d0204c59dde20430c5d7bf29f94
https://doi.org/10.1109/16.725241
https://doi.org/10.1109/16.725241
Publikováno v:
Applied Physics Letters. 70:3567-3569
Impact ionization coefficients have been deduced from photomultiplication measurements performed on Ga0.52In0.48P p–i–n diodes with nominal intrinsic region thicknesses of 1 .0, 0.7, and 0.2 μm. The results indicate that β, the hole ionization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99eab925e55648fe0b424bfb1c31fccb
https://doi.org/10.1063/1.119235
https://doi.org/10.1063/1.119235
Publikováno v:
The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications.
Measurements of avalanche photomultiplication and breakdown on a series of GaAs p/sup +/-i-n/sup +/ diodes show that the sensitivity of impact ionisation to temperature increases with i-region thickness. The effect is attributed to the increase in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0449a6b5f31bf880d48fbc220cbc5e58
https://doi.org/10.1109/edmo.2002.1174962
https://doi.org/10.1109/edmo.2002.1174962
Autor:
M. Holm, R. Ghin, M. Meliga, Gordon Burns, P. Crump, P. Gotta, C. Kompocholis, A. Davies, Michele Agresti, Paul M. Charles, A. Taylor, D. Bertone, P. Valenti, Ruiyu Fang, G. Magnetti, J. Massa, G. Rossi, Graham Michael Bury St Edmunds Berry, Paul Ryder, Roberto Paoletti, Giancarlo Meneghini
Publikováno v:
Optical Fiber Communication Conference and Exhibit.
Combining an optimised active region based on InGaAsP strained MQW (multi quantum well) and a low parasitic lateral confinement region, we fabricated 10 Gb directly modulated uncooled DFB lasers which represent, we believe, the state of art. Our DFB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5c8458c49b004779b6cb324df47d592
https://doi.org/10.1109/ofc.2002.1036453
https://doi.org/10.1109/ofc.2002.1036453
Publikováno v:
Semiconductor Science & Technology; Aug2003, Vol. 18 Issue 8, p803-806, 4p
Publikováno v:
Scopus-Elsevier
The avalanche breakdown behavior of InGa(Al)P has been investigated by growing a series of pin diode structures covering the material range from InGaP to InAlP. The results show that reverse leakage currents are very low in this material system in ke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b18c79c408341c645c5224ac4574b5c
http://www.scopus.com/inward/record.url?eid=2-s2.0-0028288085&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0028288085&partnerID=MN8TOARS
Autor:
R. Ghini, F.R.A. Patricio, M.D. Souza, C. Sinigaglia, B.C. Barros, M. E. B. M. Lopes, J. Tessarioli Neto, H. Cantarella
Publikováno v:
Revista Brasileira de Ciência do Solo, Vol 27, Iss 1, Pp 71-79 (2003)
A solarização é um método de desinfestação que consiste na cobertura do solo com um filme de polietileno transparente, durante o período de intensa radiação solar, e atua por meio do aumento da temperatura do solo. Quatro ensaios foram reali
Externí odkaz:
https://doaj.org/article/0f68a251e870476bb18d6085b1944a58