Zobrazeno 1 - 10
of 133
pro vyhledávání: '"R. Ghez"'
Autor:
R. Ghez
Publikováno v:
Defect and Diffusion Forum. 383:3-9
In most schools of engineering, this is among the first interdisciplinary courses that third-year undergraduate students are likely to attend. This presents formidable challenges because any discussion of diffusion phenomena draws heavily on prior kn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c4ade147d82343d0d69f4cd57904cf1
https://doi.org/10.4028/www.scientific.net/ddf.383.3
https://doi.org/10.4028/www.scientific.net/ddf.383.3
Autor:
Gilbert R. Ghez
Publikováno v:
The New Palgrave Dictionary of Economics ISBN: 9781349951215
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b20a5f001f7f4f579626b39975839ad8
https://doi.org/10.1057/978-1-349-95189-5_29
https://doi.org/10.1057/978-1-349-95189-5_29
Autor:
Doron Shilo, R. Ghez
Publikováno v:
European Journal of Physics. 29:25-32
The coexisting equilibrium states between single-component gas and condensed phases (liquid or solid) are often calculated by assuming that the condensed phase's molar volume is negligible in comparison with the gas's. Here, we present an analytic so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d214e08fa9ddf1a4c4ea9eafa1dc64fa
https://doi.org/10.1088/0143-0807/29/1/003
https://doi.org/10.1088/0143-0807/29/1/003
Publikováno v:
Journal of Applied Physics. 73:3685-3693
The linear stability of a Stefan‐like problem for moving steps is analyzed within the context of Burton, Cabrera, and Frank’s theory of crystal growth [Philos. Trans. R. Soc. London Ser. A 243, 299 (1951)]. Asymmetry and departures from equilibri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5965a939820288eeebc4f062e4791771
https://doi.org/10.1063/1.352928
https://doi.org/10.1063/1.352928
Publikováno v:
Journal of Crystal Growth. 123:317-320
Spatial averaging of the differential equation for transport on crystal surfaces yields a simple relation between growth rate and the average value of coverage. That relation is then compared to similar rate expressions used in the analysis of chemis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c66139ab39ff67e2ccf88d8d0dab8ce
https://doi.org/10.1016/0022-0248(92)90039-l
https://doi.org/10.1016/0022-0248(92)90039-l
Autor:
François M. d'Heurle, R. Ghez
Publikováno v:
Thin Solid Films. 215:19-25
The formation of new solid phases by diffusion between two interacting elements is analyzed on the basis of observations made (by others) on the well characterized aluminum-nickel system. Variations of the diffusion coefficients with composition have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ad6801294fdc1ed5c8a8e0f377d3c3
https://doi.org/10.1016/0040-6090(92)90695-8
https://doi.org/10.1016/0040-6090(92)90695-8
Autor:
R. Ghez, François M. d'Heurle
Publikováno v:
Thin Solid Films. 215:26-34
In most metallic compounds (and also in others) it is anticipated that the majority atoms will diffuse faster than the minority atoms. This effects has been named the ordered Cu 3 Au rule after the well known compound. Some extensions are possible. B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c587206879ea99b7fa7f009965fc8a03
https://doi.org/10.1016/0040-6090(92)90696-9
https://doi.org/10.1016/0040-6090(92)90696-9
Publikováno v:
Journal of The Electrochemical Society. 137:659-663
Silicide layers on silicon can be thermally oxidized in such a way as to grow a layer of (metal-free) SiO 2 without affecting the integrity of the silicide. The conditions necessary for this to occur depend on the rate of silicon (or metal) transport
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::199d00680d8175d2266d260000e41453
https://doi.org/10.1149/1.2086526
https://doi.org/10.1149/1.2086526
Publikováno v:
ICECS
This work deals with the simulation of two-dimensional impurity diffusion in CMOS silicon devices. The reverse modeling method was used to determine the diffusion coefficient (D/sub I/), surface recombination rate of defects (K/sub I/) and the charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9afd03a5cadc1041ada01386bfd30aea
https://doi.org/10.1109/icecs.2004.1399693
https://doi.org/10.1109/icecs.2004.1399693
Autor:
R. Ghez
Publikováno v:
A Primer of Diffusion Problems ISBN: 9783527602834
A Primer of Diffusion Problems
A Primer of Diffusion Problems
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2242c661a41a23dcf1bbf0b8f2f60f74
https://doi.org/10.1002/3527602836.app3
https://doi.org/10.1002/3527602836.app3