Zobrazeno 1 - 10
of 119
pro vyhledávání: '"R. Geilenkeuser"'
Autor:
Geilenkeuser, R., Wieczorek, K., Trentzsch, M., Graetsch, F., Bayha, B., Samohvalov, V., Paetzold, T., Schink, T.
Publikováno v:
2008 IEEE International Integrated Reliability Workshop Final Report; 2008, p1-15, 15p
Autor:
S. Steiner, F. Kuechenmeister, T. Villiger, J. Prinz, C. Papadopoulos, H. Kabus, J. Urban, C. Morabito, J. Kwon, A. Rodriguez, J. Krinke, J. Dienelt, R. Geilenkeuser, D. Breuer, M. Cammarata
Publikováno v:
Microelectronics Reliability. 114:113899
In this publication, the influence of bond wire material properties (Au 2N/4N), and plasma pre-treatment on the wire-bond strength is investigated based on Automotive Electronics Council Qualification (AEC-Q100) and customer requirements. The wire pu
Autor:
Binh Duy Le1,2, Kyung-Jin Oh3, Anh Tuan Le4,5, Long Hoang4,5, Ilwoo Park6,7,8 ipark@jnu.ac.kr
Publikováno v:
Investigative & Clinical Urology. Sep2024, Vol. 65 Issue 5, p511-517. 9p.
Publikováno v:
Physica B: Condensed Matter. :535-538
The specific heat cp of amorphous polycarbonate and amorphous polystyrene has been measured at pressures up to p = 0.7 GPa in the temperature range 0.2K
Publikováno v:
Physica B: Condensed Matter. :276-279
Both thermal conductivity λ and specific heat cp of amorphous polystyrene were measured in the temperature range 1.7 K K at three different pressure values up to p=0.4 GPa . The thermal conductivity data show that the influence of pressure is most p
Autor:
Matej, Vnucak1,2 (AUTHOR), Karol, Granak1,2 (AUTHOR) granak.k@gmail.com, Monika, Beliancinova1 (AUTHOR), Patricia, Kleinova1,2 (AUTHOR), Timea, Blichova1,2 (AUTHOR), Ivana, Dedinska1,2 (AUTHOR)
Publikováno v:
Acta Medica Martiniana. Aug2024, Vol. 24 Issue 2, p100-109. 10p.
Publikováno v:
2009 IEEE International Integrated Reliability Workshop Final Report.
This work shows how fast wafer-level reliability (fWLR) inline tests allow to quickly screen the intrinsic reliability of High-k / Metal Gate (HK/MG) process splits in an effective manner. Various Hf based gate stack compositions such as pure HfO 2 ,
Publikováno v:
IEEE International Integrated Reliability Workshop Final Report, 2004.
Here, we investigate the impact of polysilicon predoping and physical gate-dielectric thickness scaling on the interaction of CET, J/sub G/, and TDDB reliability for both NMOS- and PMOS-devices for physical thicknesses between 1.28 nm and 1.58 nm. Fu
Publikováno v:
Physica B: Condensed Matter. :1137-1138
We have measured the dielectric response e(ω) and the thermal conductivity κ of polystyrene (PS) and of polycarbonate (PC) under high hydrostatic pressure (0.1 MPa MPa ) and at low temperatures ( 50 mK K ). The investigations show a pressure influe
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