Zobrazeno 1 - 10
of 81
pro vyhledávání: '"R. G. Wheeler"'
Publikováno v:
Physical Review B. 57:2443-2446
Publikováno v:
Surface Science. :537-541
We have studied electron heating in a 2DEG in GaAs/AlGaAs heterojunctions below 0.5 K. The electron temperature was raised above the lattice temperature using Joule heating. Weak localization and the temperature-dependent sample resistance were used
Autor:
R. G. Wheeler, J. W. Sleight, William R. Frensley, R. C. Bowen, Mark A. Reed, John N. Randall, E. S. Hornbeck, M. R. Deshpande, Richard J. Matyi
Publikováno v:
Physical Review B. 53:15727-15737
Publikováno v:
Physical Review Letters. 76:1328-1331
Zeeman splitting of the ground state of single impurities in the quantum well of a resonant tunneling heterostructure is reported. We determine the absolute magnitude of the effective magnetic spin splitting factor ${g}_{\ensuremath{\perp}}^{*}$ for
Autor:
R. N. Sacks, R. G. Wheeler, Daniel E. Prober, J. W. Sleight, H. Shtrikmann, Anurag Mittal, Mark W. Keller
Publikováno v:
Physical Review B. 53:R1693-R1696
We have fabricated ballistic cavities from a two-dimensional GaAs electron gas in which the Fermi energy can be varied independent of cavity shape. For each cavity, we have measured the magnetoconductance $G(B)$ of many individual members of an ensem
Publikováno v:
Surface Science. 305:145-150
An extended network model of the transition regime between two integer quantum Hall plateaus is presented. When it is used to analyze experimental data, two parameters of interest are extracted: the resistivity of the bulk conducting channel due to t
Publikováno v:
Applied Physics Letters. 80:1761-1763
We report nonmonotonicities in the low-temperature current versus gate voltage characteristics of PtSi/Si Schottky Barrier metal–oxide–semiconductor field-effect transistors. Direct tunneling through the Schottky barrier is shown to limit the cur
Publikováno v:
Surface Science. 263:270-274
In magnetoresistance studies of high mobility GaAs/AlGaAs Hall bars in the quantum Hall regime we observe that the Hall resistance (RH) overshoots the normally observed spin plateaus; however, as the magnetic field is further increased, RH, decreases
Publikováno v:
Physical Review Letters. 68:106-109
Nearly-zero-field magnetoconductance measurements have been used to deduce the conduction-band spin splitting of GaAs. The dominant spin-scattering mechanism is the randomization of spin precession due to elastic scattering. By independently controll
Publikováno v:
Physica B: Condensed Matter. 175:235-238
Strong, reproducible fluctuations are observed in the inter-Landau-level scattering rate as the depletion potential along the edge of a Hall conductor is varied using gate electrodes. The fluctuations are thought to be due to the changing influence o