Zobrazeno 1 - 10
of 17
pro vyhledávání: '"R. G. Useinov"'
Publikováno v:
IEEE Transactions on Nuclear Science. 65:1496-1502
The impact of heavy ion energy on charge yield in silicon dioxide was investigated by irradiating power VDMOSFETs with heavy ions at energies from 3 to 25 MeV/amu. The ion charge yield was determined by analyzing the gate voltage shifts of power VDMO
Publikováno v:
IEEE Transactions on Nuclear Science. 63:2176-2182
In this work an experimental evidence of a crucial role of the charge yield in the heavy ion induced single-event gate rupture (SEGR) process in SiO2 is reported. The results of SEGR cross-sections and charge yield measurements are presented for diff
Autor:
Pavel A. Chubunov, R. G. Useinov, O. V. Meschurov, A. G. Baz, V. M. Uzhegov, Gennady I. Zebrev, P. A. Zimin, Vasily S. Anashin, Elizaveta V. Mrozovskaya
Publikováno v:
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
It was shown that enhanced charge trapping takes place in thick gate dielectrics of p-MOS and MNOS dosimeters at low dose rates (ELDRS). The results are shown to be consistent with the previously proposed model.
Publikováno v:
2018 Moscow Workshop on Electronic and Networking Technologies (MWENT).
The analytical model is used for the simulation of radiation-induced leakage current of digital thermometer DS18B20. The dependencies of the leakage current on the doserate, temperature, and electrical field are investigated experimentally and simula
Autor:
K. S. Zemtsov, Vasily S. Anashin, R. G. Useinov, Maxim S. Gorbunov, A.E. Kozyukov, Alexander I. Ozerov, Gennady I. Zebrev, Vladimir V. Emeliyanov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 775:41-45
Mean and partial cross-section concepts and their connections to multiplicity and statistics of multiple cell upsets (MCUs) in highly-scaled digital memories are introduced and discussed. The important role of the experimental determination of the up
Autor:
R. G. Useinov, Vasily S. Anashin, Gennady I. Zebrev, V.N. Ulimov, Alexander S. Petrov, Maxim G. Drosdetsky, Artur M. Galimov, Ilya V. Elushov, Renat Sh. Ikhsanov
Publikováno v:
IEEE Transactions on Nuclear Science. 61:1785-1790
Radiation response of bipolar devices irradiated under various electrical modes and dose rates at high doses has been studied. A nonlinear numerical model including ELDRS effects and electric field reduction at high doses has been developed and valid
Autor:
Valentin O. Turin, R. G. Useinov, Vasily S. Anashin, Gennady I. Zebrev, Kirill A. Yesenkov, Maxim S. Gorbunov, Alexander S. Vatuev, Vladimir V. Emeliyanov
Publikováno v:
IEEE Transactions on Nuclear Science. 61:1531-1536
We study experimentally and theoretically the microdose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We have found experimentally that cumulative increase of leakage drain current occurs
Autor:
Ivan I. Dolgov, R. G. Useinov
Publikováno v:
2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
An analytical model of the radiation-induced optical absorption in undoped optical fiber has been developed, based on self-trapped holes light absorption. The model correctly describes the dependences obtained in our investigation of gamma-radiation
Autor:
K. S. Zemtsov, Vladimir V. Emeliyanov, Alexander I. Ozerov, R. G. Useinov, Maxim S. Gorbunov, Gennady I. Zebrev
Publikováno v:
2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
We found that the energy deposition fluctuations in the sensitive volumes may cause multiplicity scatters in the multiple cell upsets (MCU) in the nanoscale (with feature sizes less than 100 nm) memories. Microdosimetric model of the MCU cross- secti
Publikováno v:
2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Temperature behavior of the charge yield and degradation saturation due to the interface precursor depletion has been modeled and simulated. Competition between the time-dependent and true dose rate (ELDRS) effects has been simulated and discussed.