Zobrazeno 1 - 10
of 136
pro vyhledávání: '"R. G. SCHAD"'
Autor:
Lawrence A. Clevenger, L. Stolt, N. A. Bojarczuk, Cyril Cabral, James Mckell Edwin Harper, R. G. Schad, F. Cardone, Karen Holloway
Publikováno v:
Journal of Applied Physics. 73:300-308
We demonstrate that depositing Ta diffusion barriers under ultra‐high vacuum conditions without in situ oxygen dosing allows for variations both in microstructure and in the concentration of chemical impurities that severely degrade barrier perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::319d57898675bd36068c0742b8bb2cd3
https://doi.org/10.1063/1.353904
https://doi.org/10.1063/1.353904
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1706-1712
Copper is an attractive metal for very large scale integrated interconnections because of its low bulk resistivity of 1.7 μΩ cm. Alloying of the copper may be required to improve the mechanical stability, adhesion, electromigration lifetime, and re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd69ad2aebe9243e20804d9429ddf465
https://doi.org/10.1116/1.577774
https://doi.org/10.1116/1.577774
Autor:
R. G. Schad, Maria Ronay
Publikováno v:
Physical Review Letters. 64:2042-2045
Diffusion studies of Cu+Re and Re+CU films on silicon show that the formation of ${\mathrm{Cu}}_{3}$Si precursor lowers the formation temperature of ${\mathrm{ReSi}}_{2}$ from over 900 to 550 \ifmmode^\circ\else\textdegree\fi{}C. The results are expl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ee2373851037f9f14d289b1e223b201
https://doi.org/10.1103/physrevlett.64.2042
https://doi.org/10.1103/physrevlett.64.2042
Autor:
R. G. Schad, Naftali Lustig
Publikováno v:
Applied Physics Letters. 60:1984-1986
The presence of oxygen in the top W layer of NiGe(Au)W ohmic contacts to n‐type GaAs is found to play a critical role in reducing their contact resistance. Contacts with sputtered W containing less than 1 at. % oxygen and formed by rapid thermal an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c0ab897cfab417fd56e6cd837790c8f
https://doi.org/10.1063/1.107119
https://doi.org/10.1063/1.107119
Autor:
H. Baratte, P. E. Hallali, Maurice Heathcote Norcott, J. P. de Souza, R. G. Schad, F. Cardone, D. K. Sadana
Publikováno v:
Journal of Applied Physics. 67:6589-6591
The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (Si3N4 or SiO2 ) rapid thermal annealing (RTA) at 900–1000 °C and to depend on the Be dose and its proximity to the surface. The outdiffusion is more
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::476d93fc78181400c5350faf24496175
https://doi.org/10.1063/1.345093
https://doi.org/10.1063/1.345093
Publikováno v:
MRS Proceedings. 308
Stresses which build up in thin films, such as tantalum, during thermal processing, can cause major reliability problems in x-ray optics and electronic applications. We have demonstrated that 50 nm to 200 nm thick sputtered beta tantalum thin films u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11e8d934b510018be94ddbf13427cd94
https://doi.org/10.1557/proc-308-57
https://doi.org/10.1557/proc-308-57
Publikováno v:
MRS Proceedings. 260
Electron-beam (e-beam) evaporated low Au content NiGe(Au)W ohmic contacts with a contact resistance (Rc) as low as 0.15 Ω-mra have been reported. Due to the high melting point of W it is desirable to deposit this layer by means other than e-beam eva
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eb16e99a0ab1236636fbae414c7204a
https://doi.org/10.1557/proc-260-493
https://doi.org/10.1557/proc-260-493
Publikováno v:
ChemInform. 21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f91fb14416c22a7e45f2ebf1894712b2
https://doi.org/10.1002/chin.199051024
https://doi.org/10.1002/chin.199051024
Autor:
Cyril Cabral, N. A. Bojarczuk, James Mckell Edwin Harper, Karen Holloway, L. Stolt, R. G. Schad, Clevenger Leigh Anne H
Publikováno v:
MRS Proceedings. 203
The effect of deposition pressure and controlled oxygen dosing on the diffusion barrier performance of thin film Ta to Cu penetration was investigated. In-situ resistivity, Auger compositional profiling, scanning electron microscopy and cross-section
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ebdb0e1bef3f5c8fdd5c17bac9f0bab
https://doi.org/10.1557/proc-203-387
https://doi.org/10.1557/proc-203-387
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:2818
Stresses which build up in thin films such as tantalum, during thermal processing, can cause major reliability problems in electronic and x‐ray optics applications. We demonstrate that 50–200 nm thick sputtered β‐Ta thin films undergo repeated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::660810a9747a41e4ce478640ae028b38
https://doi.org/10.1116/1.587197
https://doi.org/10.1116/1.587197