Zobrazeno 1 - 1
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pro vyhledávání: '"R. G. Philstrom"'
Publikováno v:
Journal of Electronic Materials. 21:277-279
Removed from the deposition region, an upstream hydrogen microwave plasma etches a surface of solid arsenic located downstream to generate arsenic hydrides. The latter are used with trimethylgallium (TMGa) to achieve low temperature (400–490° C) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10309f6a6104037cdc7cf02067606829
https://doi.org/10.1007/bf02660454
https://doi.org/10.1007/bf02660454
