Zobrazeno 1 - 10
of 37
pro vyhledávání: '"R. G. Musket"'
Publikováno v:
Journal of Applied Physics. 91:5760-5764
We have used vapor etching of ion tracks to create high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes through ∼600-nm-thick films of thermally fused silica on silicon. Samples were exposed to the vapor from wate
Publikováno v:
Journal of The Electrochemical Society. 144:2859-2864
One of the most used diagnostics for characterizing silica thin films is the etch rate (ER) in acidic, fluoride-based solutions. The ER measurement is relatively easy, fast, and cheap, which makes it attractive as an in-process monitor. For microelec
Publikováno v:
Radiation Effects and Defects in Solids. 118:225-235
Vacuum-sublimed films of C60 molecules with thicknesses of 180–300 nm were irradiated with 100- or 200-keV protons at room temperature. The effects of fluences of 3.3 × 1014 to 6.1 × 1016 H/cm2 have been examined in detail using Fourier transform
Autor:
R. G. Musket, S. J. Holmes
Publikováno v:
X-Ray Spectrometry. 19:177-184
The concept, design, characterization and operation of an apparatus for low-energy x-ray fluorescence are described. This system utilizes commercially available components in a novel arrangement. An Al K x-ray source, an ultra-thin-windowed Si(Li) de
Publikováno v:
MRS Proceedings. 777
Low dimensional systems on the nanometer scale afford a wealth of interesting possibilities including highly anisotropic behavior and quantum effects. Nanocolumns permit electrical and mechanical contact, yet benefit from two confined dimensions. Thi
Publikováno v:
Specimen Handling, Preparation, and Treatments in Surface Characterization ISBN: 9780306458873
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f41e4f446a6797aa5f4b9d04d0450110
https://doi.org/10.1007/0-306-46913-8_4
https://doi.org/10.1007/0-306-46913-8_4
Autor:
R. G. Musket
Publikováno v:
Journal of Applied Physics. 99:114314
Ion tracking and ion-track lithography have been performed almost exclusively using ions with energies near or above the maximum in electronic stopping, which occurs at ∼1MeV∕amu. In this paper, ion-track lithography using ions with energies well
Autor:
R. G. Musket, M. Balooch
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:2049
Silicon surfaces having native oxides were implanted with 3 keV Cs+ ions and annealed. Implanted doses of 1, 1.7, and 3×1016 Cs/cm2 led to room-temperature work functions with stable, reproducible values of 2.3±0.15 eV after vacuum annealing at 100
Autor:
R. G. Musket, R. J. Contolini, A. F. Bernhardt, C. Spindt, R. Barton, A. F. Jankowski, J. Macaulay, J. D. Morse, V. Liberman
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:1212
A novel field emission cathode process has been developed to produce cathode arrays with individual emitter structures having gates with