Výsledky vyhledávání - "R. G. Gateru"

Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures

Autor: S. R. P. Silva, John Martin Shannon, R. G. Gateru, J. O. Orwa

The electrical properties of hydrogenated amorphous silicon (a‐Si:H) metal–semiconductor–metal (MSM) devices are investigated as a function of Si bombardment dose prior to and after annealing. We observe that conduction in unbombarded devices i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3401388b6bc9c33f9d149aa33cf6cc60
https://surrey.eprints-hosting.org/394/

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Memory Switching in Ion Bombarded Amorphous Silicon Carbide Thin Film Devices

Autor: R. G. Gateru, John M. Shannon, S. R. P. Silva

Publikováno v: MRS Proceedings. 742

Metal-semiconductor-metal (MSM) memory devices have been made in hydrogenated amorphous silicon carbide (a-SiCx:H). Switching in silicon-rich amorphous silicon alloys is believed to be related to the concentration of defects in the semiconductor mate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8ae10445ef80abce7214eb813fb21e57
https://doi.org/10.1557/proc-742-k2.3

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Polarity-dependent forming in ion bombarded amorphous silicon memory devices

Autor: R. G. Gateru, John M. Shannon, J. O. Orwa

Publikováno v: Journal of Applied Physics. 97:024506

Polarity-dependent forming in ion bombarded metal-semiconductor-metal (MSM) memory devices of hydrogenated amorphous silicon is reported. It is shown that prior to ion bombardment, current transport in the MSM devices is asymmetric and is controlled

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbea83571a8914f9c6c818c99de1009a
https://doi.org/10.1063/1.1832748

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