Zobrazeno 1 - 10
of 23
pro vyhledávání: '"R. G. Frieser"'
Autor:
R. G. Frieser
Publikováno v:
Active and Passive Electronic Components, Vol 2, Iss 3, Pp 163-199 (1975)
Externí odkaz:
https://doaj.org/article/4ad842426f124e588e3dff0e32c1a650
Publikováno v:
Journal of The Electrochemical Society. 137:2276-2279
Conventional photoresists have been modified by the incorporation of a phosphorus-containing compound, {ital i.e.}, phosphonitrilic chloride trimer (P{sub 3}N{sub 3}Cl{sub 6}). The modification was achieved by simply dissolving P{sub 3}N{sub 3}Cl{sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2a97af0fd3e497fc90e4643c3fceef3
https://doi.org/10.1149/1.2086927
https://doi.org/10.1149/1.2086927
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:643
This paper reviews recent publications concerned with simplifying photolithographic techniques for image transfer into planarizing polyimide layers in very large scale integrated (VLSI) technology. The primary purpose of the reviewed papers is to red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af49482aaf8802f35f139839b51c2c65
https://doi.org/10.1116/1.584989
https://doi.org/10.1116/1.584989
Publikováno v:
Journal of The Electrochemical Society. 125:492-498
Durch Erhitzen oberhalb 750°C werden in Cu-haltigen Bleiglasern betrachtliche Mengen an Cu+-Ionen erzeugt, die wahrend fortdauernder Erwarmung eine braunen CuzO-Niederschlag im Glas bilden.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::311dd7f941e395b771a93266bc13e82e
https://doi.org/10.1149/1.2131481
https://doi.org/10.1149/1.2131481
Autor:
R. G. Frieser, M. D. Reeber
Publikováno v:
Journal of Applied Electrochemistry. 10:449-457
We have investigated the physical characteristics and means of producing silicon surfaces treated to provide reliable nucleation sites for boiling in perfluorinated coolants. Three techniques may be used to provide these sites; removal of mechanical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6ca638b8f15f4683fb058e198826b08
https://doi.org/10.1007/bf00614078
https://doi.org/10.1007/bf00614078
Publikováno v:
Journal of The Electrochemical Society. 134:419-424
Transistor p-n junctions are observed to have leaky electrical characteristics and increased resistivity after exposure to oxygen plasma. Heating the devices above 180/sup 0/C for at least 10 min in vacuum, nitrogen, forming gas, or air eliminates th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d73cd0decd71556a1ad88b02d7bba29
https://doi.org/10.1149/1.2100471
https://doi.org/10.1149/1.2100471
Publikováno v:
Journal of The Electrochemical Society. 130:2237-2241
This study shows that the damage observed in silicon slices after exposure to reactive ion etching in a hydrogen containing plasma is caused by physical bombardment of the surface by hydrogen ions. This conclusion is based primarily on extensive meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b7c14525c842c148b132c311b512318
https://doi.org/10.1149/1.2119559
https://doi.org/10.1149/1.2119559
Autor:
R. G. Frieser, J. Nogay
Publikováno v:
Applied Spectroscopy. 34:31-33
The use of an optical spectrographic system in the study of a CF3H plasma process has been investigated. CF3H plasma etch rates of SiO2 are related to emission intensities of spectral lines of compounds identified in the plasma. HF is a definite comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef0616e1ab84ae56f76f2b35d9416c3d
https://doi.org/10.1366/0003702804730907
https://doi.org/10.1366/0003702804730907
Autor:
R. G. Frieser, M. D. Reeber
Publikováno v:
Journal of The Electrochemical Society. 128:2639-2641
Because of the increasing density of devices on a chip (to increase the effectiveness of computers) the amount of heat generated per unit area of chip increases as well. This must be removed efficiently to prevent failure of the device. In order to p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c247360b27b51d947eb7fc9e6f1f802
https://doi.org/10.1149/1.2127319
https://doi.org/10.1149/1.2127319
Autor:
G. A. Brooks, R. G. Frieser
Publikováno v:
Journal of Vacuum Science and Technology. 10:307-309
A rotary drum evaporator has proved itself capable of depositing thin chromium films that are comparable if not superior to films deposited by other techniques. The thickness of the films is uniform and pinholes have been reduced to less than five pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3fae0ebcdf6dd6cd516a30436fec614
https://doi.org/10.1116/1.1318031
https://doi.org/10.1116/1.1318031