Zobrazeno 1 - 10
of 29
pro vyhledávání: '"R. G. Filippi"'
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 6:163-168
Via-depletion electromigration was studied under a number of conditions in a 65-nm technology. Observed failure distributions were either single mode or bimodal, depending on the structural configuration. The distribution and the time to fail for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1232145fd30eb3dba0d2735d480e252
https://doi.org/10.1109/tdmr.2006.876595
https://doi.org/10.1109/tdmr.2006.876595
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
A novel model and approach for obtaining improved electromigration short-length effects are reported. The results for a structure with Dual Damascene copper-based metallization and two width regions demonstrate that increasing the line width for a po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f30fc0d4ba36636a61291429f746f5b2
https://doi.org/10.1109/irps.2014.6860658
https://doi.org/10.1109/irps.2014.6860658
Autor:
David L. Rath, Rainer Florian Schnabel, T. Joseph, Kenneth P. Rodbell, Lynne Gignac, R. G. Filippi, X.J Ning, Chenming Hu, Gregory Costrini, Timothy D. Sullivan, Stefan Weber, G. Stojakovic, Lawrence A. Clevenger, Edward W. Kiewra, Roy C. Iggulden, M. Gribelyuk, R.V.S.S.N. Ravikumar, T. Kane, Jeff Gambino
Publikováno v:
Thin Solid Films. 388:303-314
The electromigration behavior and microstructural features of AlCu Dual Damascene lines are compared to those of AlCu metal reactively ion etched (RIE) lines. Test structures consist of 0.18-, 0.35- and 1.33-μm-wide lines terminated by W diffusion b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b7bc07472d1937181aff8531c7f159a
https://doi.org/10.1016/s0040-6090(01)00855-0
https://doi.org/10.1016/s0040-6090(01)00855-0
Autor:
D. Tobben, G.Y. Lee, Roy C. Iggulden, Stefan J. Weber, Maria Ronay, Jeff Gambino, Zhijian Lu, R.F. Schnabel, Clevenger Leigh Anne H, Gregory Costrini, R. Ramachandran, X.J. Ning, R. G. Filippi, Chenting Lin, David M. Dobuzinsky
Publikováno v:
Microelectronic Engineering. 50:265-270
This paper presents an overview of issues associated with Al dual damascene process technology. Different integration schemes are discussed and characteristics of metal fill, planarization and reliability are highlighted. Finally, a comparison is mad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c599d31a1bba637d89c644048e369c6
https://doi.org/10.1016/s0167-9317(99)00291-9
https://doi.org/10.1016/s0167-9317(99)00291-9
Publikováno v:
2013 IEEE International Electron Devices Meeting.
We report a time-dependent clustering model for non-uniform dielectric breakdown. While at high percentiles non-Possion area scaling dominates, the model restores the weakest-link characteristics at low percentiles relevant for reliability projection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e7d606b01564633111a1ef4057d9f26
https://doi.org/10.1109/iedm.2013.6724635
https://doi.org/10.1109/iedm.2013.6724635
Autor:
Baozhen Li, Xiao Hu Liu, Junjing Bao, Paul S. McLaughlin, R. G. Filippi, Ping-Chuan Wang, Lijuan Zhang
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
Electromigration lifetime and failure mechanism have been investigated for Cu/low-k interconnects at intermediate interconnect levels. It was observed that extrusion fails occurred mostly before resistance shift fails were detected. The activation en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25f00bd4b7d1b46cc117427f4a2021c4
https://doi.org/10.1109/irps.2013.6531954
https://doi.org/10.1109/irps.2013.6531954
Publikováno v:
Journal of Applied Physics. 80:4952-4959
A systematic study was performed of the microstructural and electromigration characteristics of Ti–Al(Cu)–Ti laminate structures fabricated from two metal wiring levels 1 μm in width. The total Cu content in the Al(Cu) core layers was varied fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::503b5138eb2e0fea9235d065a9222173
https://doi.org/10.1063/1.363539
https://doi.org/10.1063/1.363539
Autor:
B. Redder, Ping-Chuan Wang, R. G. Filippi, Paul S. McLaughlin, A. Brendler, J. Poulin, James R. Lloyd, James J. Demarest
Publikováno v:
2011 International Reliability Physics Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18465abaed1ba5ace3fba426e109548f
https://doi.org/10.1109/irps.2011.5784438
https://doi.org/10.1109/irps.2011.5784438
Autor:
Edward Engbrecht, Junjing Bao, Philip L. Flaitz, Stephen M. Gates, Son Nguyen, A. Simon, Jihong Choi, Shao Beng Law, Eden Zielinski, Hosadurga Shobha, Dimitri R. Kioussis, Wei-Tsu Tseng, R. G. Filippi, Anthony D. Lisi, T. Lee, Tien-Jen Cheng, Naftali E. Lustig, Kaushik Chanda, Alfred Grill, Jason Gill
Publikováno v:
2010 IEEE International Interconnect Technology Conference.
A multilevel back-end-of-line structure with a dielectric constant k ≤ 2.4 ultra low-k materials was developed. k=3D2.2 ULK build was demonstrated at a 144nm wiring pitch and a k=3D2.4 ULK was demonstrated at a 288nm pitch. Good model-to-hardware c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58862e215753873f6bcca49042c73522
https://doi.org/10.1109/iitc.2010.5510761
https://doi.org/10.1109/iitc.2010.5510761
Autor:
R. G. Filippi, B. Redder, Paul S. McLaughlin, Ping-Chuan Wang, J. Poulin, A. Brendler, James R. Lloyd, James J. Demarest
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
Electromigration results are described for a Dual Damascene structure with copper metallization and a low-k dielectric material. The failure times follow a bimodal lognormal behavior with early and late failures. Moreover, there is evidence of a thre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84e029923a8217395eaaa22d9587ec87
https://doi.org/10.1109/irps.2009.5173295
https://doi.org/10.1109/irps.2009.5173295