Zobrazeno 1 - 7 of 7 pro vyhledávání: '"R. G. Bedford"'
1
Study of bulk carrier properties in largely hybridized InAsSb/GaSb superlattice materials
Autor: H. J. Haugan, S. Elhamri, K. Mahalingam, D. Das, L. R. Ram-Mohan, R. G. Bedford, K. G. Eyink
Publikováno v: Journal of Applied Physics. 133:024301
The prospect of implementing quantum device architectures with technologically mature III–V semiconductors requires precisely controlled topologically protected edge states and bulk insulation. However, experimentally reaching this regime with III
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba9af0bc88b2c1816ae070fe011f5552
https://doi.org/10.1063/5.0135914
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2
Optimization of hybridized InAsSb/InGaSb semiconductor topological materials
Autor: H. J. Haugan, D. Das, S. Bharadwaj, L. R. Ram-Mohan, J. P. Corbett, R. K. Smith, J. A. Gupta, K. Mahalingam, R. G. Bedford, K. G. Eyink
Publikováno v: Applied Physics Letters. 121:062109
Generating large topologically protected surface currents using conventional III–V infrared materials such as InAsSb/InGaSbAs quantum wells (QWs) and superlattices (SLs) has been important. In such materials, topological states can be formed at the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::669506b015ad67bbd21d3b52ffbe2f5c
https://doi.org/10.1063/5.0099721
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