Zobrazeno 1 - 2
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pro vyhledávání: '"R. Früchtnicht"'
Publikováno v:
Psych. Pflege Heute. 9:219-225
Publikováno v:
MRS Proceedings. 92
Thin layers of SiO2 (60-300 Å) were fabricated by rapid thermal oxidation (RTO). Growth rate on (100) and (111) Si was determined. Two different high-temperature anneal cycles were used to reduce the interface state density. Work function difference