Zobrazeno 1 - 10
of 36
pro vyhledávání: '"R. Fournel"'
Autor:
J. Minguet Lopez, C. Sabbione, G. Molas, L. Grenouillet, D. Alfaro Robayo, Mathieu Bernard, Marc Bocquet, D. Deleruyelle, L. Couture, G. Navarro, R. Fournel, O. Billoint, C. Cagli, E. Nowak, Jean-Michel Portal, C. Carabasse
Publikováno v:
2020 IEEE International Memory Workshop (IMW)
2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108126⟩
2020 IEEE International Memory Workshop (IMW), May 2020, Dresden, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108126⟩
Al 2 O 3 based Conductive Bridge RAM (CBRAM) is co-integrated with an optimized Ge-Se-Sb-N based back-end selector in 1S1R memory arrays for low voltage and advanced CMOS compatibility. Electrical characterization is performed to extract device featu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8972e7e5813bc4a3cf3b213870caab38
https://doi.org/10.1109/imw48823.2020.9108126
https://doi.org/10.1109/imw48823.2020.9108126
Autor:
Laurent Brunet, R. Fournel, Perrine Batude, Sebastien Thuries, O. Billoint, M. Vinet, D. Lattard, C. Fenouillet-Beranger, Francois Andrieu
Publikováno v:
2018 International Conference on IC Design & Technology (ICICDT)
ICICDT
ICICDT
In this paper, we review the main opportunities brought by 3D-monolithic integration for CMOS device and digital circuit. Simulation results show that 3D monolithic integration can provide up to 30% power reduction at iso-performance and 30% manufact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2967a4647201eb99bdfa0a94efdc8cb
Autor:
Hans Werner Schumacher, R. Fournel, Cedric Maufront, Thibaut Devolder, Joo-Von Kim, Claude Chappert
Publikováno v:
IEE Proceedings - Science, Measurement and Technology. 152:196-200
Precessional switching of the magnetisation is a convenient way to ensure sub-ns, reliable, energy cost efficient writing of an MRAM cell. In this technique, a controlled pulse of magnetic field is applied perpendicular to the easy magnetisation axis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49e12c420389d18ab8f03594d9721dfe
https://doi.org/10.1049/ip-smt:20049037
https://doi.org/10.1049/ip-smt:20049037
Akademický článek
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Publikováno v:
IEEE Transactions on Magnetics. 42:3323-3325
The contribution of conduction electron scattering to magnon relaxation in Permalloy thin films [2-20 nm] was studied by resistivity measurements and by high frequency permeability measurements using network analyzer ferromagnetic resonance. Both eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b01bc6d87911231d596f85095440b80
https://doi.org/10.1109/tmag.2006.879718
https://doi.org/10.1109/tmag.2006.879718
Publikováno v:
IEEE Transactions on Magnetics. 41:2655-2657
The precessional dynamics of synthetic antiferromagnet and synthetic ferrimagnet structures is studied using numerical simulations. It is demonstrated that sub-nanosecond reversal of perfectly compensated disc elements (zero net moment) is possible w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e5d9c8aefe6a06f60865a5a0cd2a382
https://doi.org/10.1109/tmag.2005.854936
https://doi.org/10.1109/tmag.2005.854936
Publikováno v:
INTERMAG 2006 - IEEE International Magnetics Conference.
In the linear regime, a measure of the magnetic damping can be obtained from the linewidth of the ferromagnetic resonance peak. One means of distinguishing between different classes of damping mechanisms is to examine the frequency dependence of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fd046236dccf242d67083af6a691761
https://doi.org/10.1109/intmag.2006.376153
https://doi.org/10.1109/intmag.2006.376153
Publikováno v:
INTERMAG 2006 - IEEE International Magnetics Conference.
This study aims to determine the role of electron scattering in the damping mechanisms of magnetization and electrical resistivity of Permalloy thin films at varying temperatures. The complex dynamic susceptibility of the magnetic thin films are meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bfee79399821cf7874495980a9d23df
https://doi.org/10.1109/intmag.2006.376154
https://doi.org/10.1109/intmag.2006.376154
Autor:
K. Smith, C. Frey, B. Feil, T. Ditewig, J. J. Sun, J. Chan, R. Fournel, R. Cuppens, Mark A. Durlam, D. Galpin, L. Wise, Saied N. Tehrani, M. Lien, Mark F. Deherrera, J. Tamim, Thomas W. Andre, J. Calder, Gloria Kerszykowski, Joseph J. Nahas, K. Nagel, R. Williams, B. Martino, Bradley J. Garni, S. Zoll, Jason Allen Janesky, Chitra K. Subramanian, J. Martin, Renu W. Dave, F. List, B.N. Engel, P. Brown, G. Grynkewich
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
A 90nm magnetoresistive random access memory (MRAM) based on the toggle switching mode has been successfully demonstrated for the first time in a 90nm CMOS process. The MRAM memory cell is based on a 1-transistor 1-magnetic tunnel junction (1T1MTJ) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b774146b05cdf49fe162d07dbfe6101b
https://doi.org/10.1109/.2005.1469261
https://doi.org/10.1109/.2005.1469261
Akademický článek
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