Zobrazeno 1 - 10
of 21
pro vyhledávání: '"R. Fourmeaux"'
Publikováno v:
Journal of Applied Physics. 96:3307-3311
Magnetic tunnel junctions (MTJs) in which an iron oxide was deposited between the Al2O3 barrier and the pinned CoFe electrode were shown to exhibit a large tunneling magnetoresistance (TMR) value of 39% after annealing at 380°C. Local transmission e
Publikováno v:
Surface and Coatings Technology. 141:88-95
Mullite coatings (3Al 2 O 3 –2SiO 2 ) were obtained in a cold wall reactor using aluminium trichloride, silicon tetrachloride and nitrous oxide as precursors with nitrogen and hydrogen as carrier gases. The experimental preparation conditions were
Autor:
R. Fourmeaux, J. Sevely, O. Dugne, Alain Guette, J. P. Rocher, Y. Khin, S. Prouhet, Roger Naslain, J. Cotteret
Publikováno v:
Journal of Materials Science. 28:3409-3422
The fibre-matrix interfacial zone formed during the isothermal/isobaric chemical vapour infiltration processing of SiC fibres (ex-polycarbosilane)/boron nitride/SiC matrix composites has been analysed by TEM/electron energy loss spectroscopy, Auger e
Publikováno v:
Carbon. 28:573-578
It is already established that a nitrogen content in carbon fibres induces poor high tensile strength properties of the fibres. Up to now the nitrogen localization in the fibre, particularly along the diameter, was not known, due to the small size of
Autor:
N. T. Moshegov, R. Fourmeaux, D. Dorignac, A. Mazel, E. Petitprez, Euclydes Marega, P. Basmaji
Publikováno v:
Brazilian Journal of Physics v.29 n.4 1999
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics, Volume: 29, Issue: 4, Pages: 738-741, Published: DEC 1999
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics, Volume: 29, Issue: 4, Pages: 738-741, Published: DEC 1999
We report optical and structural characterizations of InAs quantum dot superlattices grown by molecular beam epitaxy on GaAs (001). Cross-sectional electron microscopy imaging reveals ~ 20 nm diameter InAs islands well aligned along the growth direct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b8e1c4648924a286417cc432bc716ca
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400025
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400025
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:1493
We have investigated self-assembled InAs quantum dot superlattices using photoluminescence and transmission electron microscopy. We report results regarding the influence of the dot vertical separation on the optical properties of such structures. Th
Publikováno v:
Le Journal de Physique Colloques. 49:C8-1163
Observation de la structure des domaines par microscopie electronique de Lorentz dans des couches amorphes Fe 1-x Zr x (x=9 a 13%) (1000 a 2000 A d'epaisseur) vers la temperature de l'helium liquide. On observe plusieurs niveaux de fluctuations magne
Publikováno v:
Physical Review Letters. 61:1013-1016
Direct observations of the magnetization structure in two reentrant spin-glass alloys [polycrystalline ${\mathrm{Ni}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}$ and amorphous ${({\mathrm{Fe}}_{78}{\mathrm{Mn}}_{22})}_{75}$${\mathrm{P}}_{16}$${\mathrm{B}}_{
Publikováno v:
Journal of Applied Physics. 63:4086-4088
Lorentz electron transmission microscopy investigations of the magnetization structure as a function of temperature (6 K≲T≲290 K) in amorphous films of Fe90Zr10 are reported. Magnetic domains as large as ∼50 μm are observed. It is found that t
Autor:
Danièle Gonbeau, Roger Naslain, S. Prouhet, R. Fourmeaux, Geneviève Pfister-Guillouzo, C. Guimon, K. Hssein, O. Dugne, Alain Guette, J. Sevely
Publikováno v:
Journal de Physique Colloques
Journal de Physique Colloques, 1989, 50 (C5), pp.C5-333-C5-341. ⟨10.1051/jphyscol:1989540⟩
Journal de Physique Colloques, 1989, 50 (C5), pp.C5-333-C5-341. ⟨10.1051/jphyscol:1989540⟩
BN-films deposited, from BF3-NH3 mixtures under CVI-conditions, either within porous SiC fiber preforms or on plan sintered SiC substrates, have been characterized, at a submicron scale, by XRD, AES, XPS and TEM. The deposits are non-stoichiometric w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bab0ea3f0d55d35b1e0b64d88938596d
https://hal.archives-ouvertes.fr/jpa-00229563/file/ajp-jphyscol198950C540.pdf
https://hal.archives-ouvertes.fr/jpa-00229563/file/ajp-jphyscol198950C540.pdf