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pro vyhledávání: '"R. Fool-Rubio"'
Autor:
I. Anefnaf, S. Aazou, Y. Sánchez, P. Vidal-Fuentes, R. Fool-Rubio, K. J. Tiwari, S. Giraldo, Z. Jehl Li-Kao, J. Andrade-Arvizu, M. Guc, E. Saucedo, Z. Sekkat
Germanium-based wide band gapkesteritesemiconductor Cu2ZnGe(S,Se)4(CZGeSSe) is considered a very promising absorber compound as top cell in tandem devices. Autonomy to tailor the band gap from ~1.47eV (Cu2ZnGeSe4-CZGeSe) to ~2.2eV (Cu2ZnGeS4-CZGeS),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::94e79b3f0396cfdfcd33e093580fd01f
https://zenodo.org/record/8058012
https://zenodo.org/record/8058012
