Zobrazeno 1 - 10
of 18
pro vyhledávání: '"R. Ferrant"'
Autor:
K. Gourgoura, P. Rivadeneyra, E. Stanghellini, C. Caroni, F. Bartolucci, R. Curcio, S. Bartoli, R. Ferranti, I. Folletti, M. Cavallo, L. Sanesi, I. Dominioni, E. Santoni, G. Morgana, M. B. Pasticci, G. Pucci, G. Vaudo
Publikováno v:
BMC Infectious Diseases, Vol 24, Iss 1, Pp 1-10 (2024)
Abstract Background Long-term sequelae of SARS-CoV-2 infection, namely long COVID syndrome, affect about 10% of severe COVID-19 survivors. This condition includes several physical symptoms and objective measures of organ dysfunction resulting from a
Externí odkaz:
https://doaj.org/article/6846c7b4ae094fb88743d1f29e2ef798
Autor:
K. Gourgoura, P. Rivadeneyra, E. Stanghellini, C. Caroni, F. Bartolucci, R. Curcio, S. Bartoli, R. Ferranti, I. Folletti, M. Cavallo, L. Sanesi, I. Dominioni, E. Santoni, G. Morgana, M. B. Pasticci, G. Pucci, G. Vaudo
Publikováno v:
BMC Infectious Diseases, Vol 24, Iss 1, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/5be6b76ac4594169917a71eda0b55869
Autor:
R. Ferrant, M. Szczap, E. Perea, H. Mingam, C. Gallon, M. Sellier, F. Buf, Franck Arnaud, A. Pouydebasque, Alexis Farcy, Jean-Pierre Schoellkopf, A. Cathignol, Stephane Monfray, Thomas Skotnicki, Sylvain Clerc, F. Payet, Claire Fenouillet-Beranger
Publikováno v:
IEEE Transactions on Electron Devices. 55:96-130
The paradigm and the usage of CMOS are changing, and so are the requirements at all levels, from transistor to an entire CMOS system. The traditional drivers, such as speed and density of integration, are subject to other prerogatives related to vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7ecea46c57437f0e51336a00044a55f
https://doi.org/10.1109/ted.2007.911338
https://doi.org/10.1109/ted.2007.911338
Publikováno v:
IEEE Transactions on Nuclear Science. 41:2467-2473
An original method, to identify the initial patterns that are the most favourable to obtain upsets under X-ray pulses, has been developed on static RAMs in the standby mode. The results obtained with these initial patterns are interesting in order to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3a203188081d5c69cf5c86c38b707fa
https://doi.org/10.1109/23.340603
https://doi.org/10.1109/23.340603
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789048193783
The paper presents a detailed study on the idle leakage reduction techniques on partially depleted silicon-on-insulator (PD-SOI) CMOS SRAM. The most promising leakage reduction techniques that have been proposed are introduced, analyzed and compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::073bb9262852f4c61c9fcd63264794a2
https://doi.org/10.1007/978-90-481-9379-0_10
https://doi.org/10.1007/978-90-481-9379-0_10
Autor:
Bertrand Borot, S. Colquhoun, R. Ferrant, M. Sellier, Frederic Boeuf, Alexis Farcy, J.-M. Portal
Publikováno v:
ISQED
The main goal of this paper is to study the delay evolution for future technology nodes (32 nm and beyond) using electrical circuit predictive simulations. With this aim, two SPICE predictive models, directly based on ITRS data, are developed for dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a845868b226ece3b659588a834dfffb
https://doi.org/10.1109/isqed.2008.4479784
https://doi.org/10.1109/isqed.2008.4479784
Publikováno v:
Microbiologia Medica, Vol 19, Iss 2 (2004)
Externí odkaz:
https://doaj.org/article/e15e10ebf73249968fa75eda521a7bef
Publikováno v:
Microbiologia Medica, Vol 18, Iss 2 (2003)
Externí odkaz:
https://doaj.org/article/91808f2e13bc4ce0a9c041a9052ac88f
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Akademický článek
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