Zobrazeno 1 - 10
of 40
pro vyhledávání: '"R. F. W. Pease"'
Autor:
Leili Baghaei Rad, Hanying Feng, Jun Ye, R. F. W. Pease, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M. Secula
Publikováno v:
AIP Conference Proceedings.
Current methods for reconstructing surface topography from SEM images are either not suitable at nanometer scales, restricted to simple shapes described by a limited number of parameters or involve time consuming steps. We describe a reconstruction a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab3d4db50a13b602e18b406eec054f1f
https://doi.org/10.1063/1.2799427
https://doi.org/10.1063/1.2799427
Publikováno v:
International Journal of Electronics
A first-order discussion of convective heat removal from a hypothetical 3-dimensional computing system is presented. A textbook treatment indicates that our heat removal capability can be characterized by a quantity Q, the amount of power we can remo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a53bedafc301aa822158777507252ff1
https://hdl.handle.net/11693/26153
https://hdl.handle.net/11693/26153
Autor:
R. F. W. Pease, L. S. Hordon
Publikováno v:
AIP Conference Proceedings.
We present an analysis of the impact of space charge effects on the performance of a proposed scanning tunneling microscope (STM) microlens with magnetic focusing.1 We compare analytical and numerical estimates of energy broadening, and consider scal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83ec8f9cb5924467f6497dd70fa6b555
https://doi.org/10.1063/1.41389
https://doi.org/10.1063/1.41389
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:568
Trenches in a layer of SiO2 on Si, with feature sizes down to 0.125 μm have been filled with tungsten (W) using selective chemical vapor deposition (CVD). The trenches were formed in a fashion similar to contact vias by reactive ion etching the SiO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::202fb7f9aee94940f57dc540391e4d28
https://doi.org/10.1116/1.585011
https://doi.org/10.1116/1.585011
Publikováno v:
Bell System Technical Journal. 53:1137-1173
A method of frame-to-frame coding is proposed in which the changes from one frame to the next are first detected and then transmitted as an intraframe coded signal rather than as frame-to-frame differences. A coder was constructed to test the proposa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c57b0adb021e3c221d97791f22df044
https://doi.org/10.1002/j.1538-7305.1974.tb02785.x
https://doi.org/10.1002/j.1538-7305.1974.tb02785.x
Publikováno v:
Journal of Vacuum Science and Technology. 10:1078-1081
In IGFET circuitry, it has been predicted that halving the lateral dimensions should bring about approximately a fourfold speed advantage; providing doping levels, vertical dimensions, and applied voltages are constant. We have used electron lithogra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f5f9aa788c6ee015447eddca25d6193
https://doi.org/10.1116/1.1318472
https://doi.org/10.1116/1.1318472
Publikováno v:
Applied Physics Letters. 35:463-466
A commercial scanning electron microscope, modified for high‐current operation, has been successfully used to anneal silicon layers driven amorphous by high doses of implanted arsenic. Selected‐area electron channeling patterns indicate complete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::971c82d2524f3e0050921bb3cf9b9c7c
https://doi.org/10.1063/1.91170
https://doi.org/10.1063/1.91170
Publikováno v:
Journal of Vacuum Science and Technology. 16:1843-1846
A commercial scanning electron microscope, modified for high current operation, has been successfully used to anneal arsenic implanted silicon. The measured parameters of the electron–beam are shown to fit a model for localized heating, taking into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8eeadb8604130491d1a12a292eafed4
https://doi.org/10.1116/1.570309
https://doi.org/10.1116/1.570309
Autor:
R. F. W. Pease
Publikováno v:
Contemporary Physics. 22:265-290
Electron beam lithography means writing patterns in thin films of electron sensitive material using a finely focused (sub-micrometre diameter) electron beam. By combining electrical scanning with interferometrically monitored mechanical motion, very
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac92f5f67f3ef5e445f7c2034a6c77fa
https://doi.org/10.1080/00107518108231531
https://doi.org/10.1080/00107518108231531
Autor:
R. F. W. Pease, S. Trimberger
Publikováno v:
IEEE Spectrum. 20:100-105
The role of VLSI in the development of next-generation computers is examined. Progress in VLSI design aids and fabrication technology is discussed. Present capabilities are only a factor of between two and ten away from those required for the million
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e068decff4b387408a983d69c6245b
https://doi.org/10.1109/mspec.1983.6370030
https://doi.org/10.1109/mspec.1983.6370030