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pro vyhledávání: '"R. F. M. Hendriks"'
Publikováno v:
Applied Physics Letters. 75:1976-1978
We show that the leakage current through a metal–semiconductor–metal photodetector can be reduced by placing a thin interfacial silicon dioxide layer between the Schottky metal and the silicon substrate. We measure a factor 5.2 reduction in leaka
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d89406beeb6acd71716974967731b0f
https://doi.org/10.1063/1.124890
https://doi.org/10.1063/1.124890
