Zobrazeno 1 - 10
of 46
pro vyhledávání: '"R. F. Kopf"'
Publikováno v:
Physical Review B. 56:3567-3570
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::222c4eb00a41214deb22d8940a68cb59
https://doi.org/10.1103/physrevb.56.3567
https://doi.org/10.1103/physrevb.56.3567
Autor:
G. von Plessen, Jochen Feldmann, Keith W. Goossen, Torsten Meier, R. F. Kopf, Martin Koch, Ernst O. Göbel, Stephan W. Koch, P. Thomas, J. M. Kuo
Publikováno v:
Physical Review B. 53:13688-13693
We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67177a9627783c7c89a193c34b5ab7bc
https://doi.org/10.1103/physrevb.53.13688
https://doi.org/10.1103/physrevb.53.13688
Autor:
Torsten Meier, R. F. Kopf, Keith W. Goossen, Ernst O. Göbel, G. von Plessen, J. M. Kuo, P. Thomas, Jochen Feldmann, Stephan W. Koch, Martin Koch
Publikováno v:
Il Nuovo Cimento D. 17:1759-1762
We study exciton ionization induced by an axial electric field in a strongly coupled GaAs/Al0.3 Ga0.7 As superlattice at low temperatures. The field-induced ionization times of the heavy-hole 1s exciton in the miniband field regime are determined fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e2d1132df4feabd4cb246a536d9df4b
https://doi.org/10.1007/bf02457276
https://doi.org/10.1007/bf02457276
Publikováno v:
Semiconductor Science and Technology. 9:1659-1665
We report the micro-Raman scattering by a photoexcited plasma coupled to LO phonon modes in AlxGa1-xAs at power densities as high as 1.3*106 W cm-2. There are two polar modes, so three branches of the coupled plasmon-LO phonon dispersion are expected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35941322924db654bbdc92c34120f5ad
https://doi.org/10.1088/0268-1242/9/9/014
https://doi.org/10.1088/0268-1242/9/9/014
Autor:
Thomas J. Cloonan, Anthony L. Lentine, David A. B. Miller, Frederick B. McCormick, R. F. Kopf, J. M. Kuo, Leo M. F. Chirovsky, L. A. D’Asaro, Stephen J. Hinterlong
Publikováno v:
Applied optics. 29(8)
We demonstrate quantum well tri-state logic devices for possible use in optical bus architectures. These optical devices are analogous to the tri-state devices often used in electronic buses, where each device can be actively on, actively off, or dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b525e6d874a4e490b4518d4ce08ef45
https://pubmed.ncbi.nlm.nih.gov/20562974
https://pubmed.ncbi.nlm.nih.gov/20562974
Autor:
M. T. Asom, E.J. Laskowski, Stephen J. Pearton, M.W. Focht, Fan Ren, L.M.F. Chirovsky, R. F. Kopf, G. J. Przybylek, T.K. Woodward, S.-S. Pei, L.E. Smith, R.E. Leibenguth, G.D. Guth, J. M. Kuo, Anthony L. Lentine, L.A. D'Asaro
Publikováno v:
IEEE Electron Device Letters. 13:528-531
The authors have demonstrated a smart pixel prototype field-effect-transistor-self-electrooptic-effect-device (FET-SEED) integrated optoelectronic amplifier utilizing process technology suitable for flexible design and fabrication of high-yield optoe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::400fc72080be1f4301696452732986e1
https://doi.org/10.1109/55.192823
https://doi.org/10.1109/55.192823
Publikováno v:
Journal of Applied Physics. 71:5004-5011
The band offset parameter Qc = ΔEc/ΔEg for both GaAs/AlGaAs (lattice matched to GaAs), and GaInAs/AlInAs (lattice matched to InP) was extracted from the optical interband transition energies obtained from both triangular and parabolic quantum well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b827a9a9bd06e75b822269978d446c80
https://doi.org/10.1063/1.350600
https://doi.org/10.1063/1.350600
Autor:
Ken W. West, S. B. Darack, Ulrich D. Keil, R. F. Kopf, Douglas R. Dykaar, A. F. J. Levi, Loren Pfeiffer
Publikováno v:
IEEE Journal of Quantum Electronics. 28:2333-2342
The authors present measurements of picosecond pulse propagation on coplanar strip transmission lines for which speed (i.e., group velocity), as well as phase and amplitude information are measured. Electrode effects are studied using transmission li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c7c7f34a50bffe8db841c69820c27c
https://doi.org/10.1109/3.159540
https://doi.org/10.1109/3.159540
Autor:
R. F. Kopf, Stephen J. Pearton
Publikováno v:
Journal of Electronic Materials. 20:535-539
The etching characteristics of InGaAlAs alloys lattice-matched to InP were investigated using low pressure (1 mTorr) electron cyclotron resonance CH4:H2:Ar or CCl2F2:Ar discharges with additional radiofrequency biasing of the samples. Using CCl2F2:Ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd972131fd617daefbf229cb72f120dc
https://doi.org/10.1007/bf02666014
https://doi.org/10.1007/bf02666014
Publikováno v:
Journal of Electronic Materials. 19:521-531
The resolution of the Capacitance-Voltage (C-V) technique on semiconductors with quantum-confinement is shown to be given by the spatial extent of the wave function which represents the electron (hole) system. The classical Debye-length-broadening of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2344d127f996a017a3bb949b0d35fec9
https://doi.org/10.1007/bf02651273
https://doi.org/10.1007/bf02651273