Zobrazeno 1 - 10
of 37
pro vyhledávání: '"R. F. Babayeva"'
Autor:
R. F. Babayeva, T. G. Naghiyev
Publikováno v:
Modern Physics Letters B.
n-InSe single crystals were grown by the Bridgman method. Electroluminescence in undoped and rare-earth-doped (Dy and Er) crystals has been experimentally studied. It has been established that in both groups of crystals, electroluminescence is observ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88e6ee43b40955097bd66324edb8013c
https://doi.org/10.1142/s0217984923500586
https://doi.org/10.1142/s0217984923500586
Autor:
A. Sh. Abdinov, R. F. Babayeva
Publikováno v:
Semiconductors. 56:39-42
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b6d8b5d52692d715e7842dc2e8a64f3
https://doi.org/10.1134/s1063782622010018
https://doi.org/10.1134/s1063782622010018
Autor:
A.Sh. Abdinov, R. F. Babayeva
Publikováno v:
Izvestiya vysshikh uchebnykh zavedenii. Fizika. :76-81
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b9193a3aa9e4b06aad4af17bd50a21e
https://doi.org/10.17223/00213411/64/2/76
https://doi.org/10.17223/00213411/64/2/76
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:14330-14335
TlGaS2 and TlGaSe2 ternary semiconducting compounds have been of scientific interest due to their large ultrafast optical nonlinearity characteristics. These remarkable properties make them promising semiconducting materials in photonic applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::081ffab69a3a58ea7e03b681c647a473
https://doi.org/10.1007/s10854-020-03990-8
https://doi.org/10.1007/s10854-020-03990-8
Autor:
A. Sh. Abdinov, R. F. Babayeva
Publikováno v:
Semiconductors. 52:1662-1668
The dependences of the Hall electron mobility of n-InSe single crystals grown by the Bridgman method on a sample’s technological history, temperature, electric field, doping, and illumination are experimentally investigated. It is established that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::523a6ff04e8156169846ed91ccc05059
https://doi.org/10.1134/s106378261813002x
https://doi.org/10.1134/s106378261813002x
Autor:
R. F. Babayeva, A. Sh. Abdinov
Publikováno v:
Journal of Physics: Conference Series. 1697:012065
Thermo-e.m.f. of hot current carriers is experimentally investigated in non-doped n-InSe crystals with a dark specific resistance of 2·103≤ρD0 ≤9·106Ω·cm at 77 K and doped with erbium with 10−5≤NEr ≤10−1at.%. It was found that its ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f6df01febc46eb80191fc8a79caf964
https://doi.org/10.1088/1742-6596/1697/1/012065
https://doi.org/10.1088/1742-6596/1697/1/012065
Publikováno v:
Semiconductors. 48:981-985
The effect of light from intrinsic and impurity optical absorption regions on free-carrier mobility in nominally undoped indium monoselenide n-InSe crystals with the initial dark conductivity σ T0 = 10−3−10−8 Ω−1 cm−1 at 77 K is investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345f5b1003bfdc948bb6fec544360957
https://doi.org/10.1134/s1063782614080028
https://doi.org/10.1134/s1063782614080028
Autor:
R. F. Babayeva, A. Sh. Abdinov
Publikováno v:
Journal of Physics: Conference Series. 1400:066047
In single-crystal n-InSe layered semiconductors at 77÷300 K, the dependence of the electrical conductivity on the strength of a strong electric field by an ultrahigh frequency (UHF) was studied. It was established that at low temperatures, the magni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac37733033282686ffb51f13a3b17c83
https://doi.org/10.1088/1742-6596/1400/6/066047
https://doi.org/10.1088/1742-6596/1400/6/066047
Autor:
Babayeva, R. F., Naghiyev, T. G.
Publikováno v:
Modern Physics Letters B; 7/30/2023, Vol. 37 Issue 21, p1-7, 7p
Publikováno v:
Semiconductors. 47:1013-1017
In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility (μ) on the initial dark resistivity is experimentally investigated at 77 K (ρd0), as well as on the temperature and the level (N) of rare-earth doping with such el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::893c418c0989637112499f74222e22e0
https://doi.org/10.1134/s1063782613080022
https://doi.org/10.1134/s1063782613080022