Zobrazeno 1 - 10
of 49
pro vyhledávání: '"R. Elpelt"'
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 2:349-352
We report on electron transport in growth direction and relaxation mechanisms in δ-doped GaAs-superlattices. In order to investigate pure electron transport, n-type δ–n–i–p–i structures sandwiched between two n+-cladding layers have been in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d164563d9ba60565a10e8adfb202d66b
https://doi.org/10.1016/s1386-9477(98)00073-3
https://doi.org/10.1016/s1386-9477(98)00073-3
Autor:
R. Elpelt, D. Peters, Peter Blaschitz, M. Treu, K. Ruschenschmidt, Roland Rupp, T. Sekinger, P. Friedrichs
Publikováno v:
IAS
This paper compares the two most prominent alternatives of an upcoming commercial SiC power switch: JFET vs. MOSFET. Besides the lower specific Ron achievable with a SiC-JFET according to today's technological progress, also reliability and long term
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba194170e0dd11ac2b9cc5aaf40c7855
https://doi.org/10.1109/07ias.2007.10
https://doi.org/10.1109/07ias.2007.10
Autor:
P. Friedrichs, R. Elpelt
Publikováno v:
2007 IEEE Power Electronics Specialists Conference.
The presented work shows simulated and experimental results of a method to improve the on-resistance of SiC Power devices by an optimized utilization of the drift zone. Mostly SiC devices have quite thin drift layers compared to silicon devices. Thus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da9ba6f249ab4343378250a8528fd8e9
https://doi.org/10.1109/pesc.2007.4342123
https://doi.org/10.1109/pesc.2007.4342123
Publikováno v:
2005 European Conference on Power Electronics and Applications.
This work presents the transient behaviour of paralleled 6.5 kV bipolar SiC diodes with aluminium implanted emitters. The switching behaviour at a current level of 30 A is shown at DC link voltages up to 4 kV and at a junction temperature of 125degC.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aec34cf7794611b8dd3f4cdf8334f1cb
https://doi.org/10.1109/epe.2005.219731
https://doi.org/10.1109/epe.2005.219731
Publikováno v:
Physical Review B. 69
Electron transport through single-, double-, and triple-barrier structures created by the insertion of suitably $\ensuremath{\delta}$-doped layers in GaAs is investigated. The results are compared with experiments on barriers of similar shape, but ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77c7c7c24c0d049b1e1a8216a49ef04f
https://doi.org/10.1103/physrevb.69.205305
https://doi.org/10.1103/physrevb.69.205305
Publikováno v:
Physical Review B. 65
We report a combined theoretical and experimental study of vertical electron transport in wide barrier superlattices. The proposed microscopic transport model is applied to a parabolic ${\mathrm{Al}}_{0.4}{\mathrm{Ga}}_{0.6}\mathrm{A}\mathrm{s}/\math
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cfc1a5d23d0bfd39968becdd2c55ec1
https://doi.org/10.1103/physrevb.65.035328
https://doi.org/10.1103/physrevb.65.035328
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642639937
Springer Proceedings in Physics
Springer Proceedings in Physics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ff50ae16ce076344bffec3e610c8d1
https://doi.org/10.1007/978-3-642-59484-7_403
https://doi.org/10.1007/978-3-642-59484-7_403
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