Zobrazeno 1 - 4
of 4
pro vyhledávání: '"R. E. Welser"'
Autor:
L. J. Guido, R. E. Welser
Publikováno v:
Applied Physics Letters. 68:912-914
The nucleation of InAs islands on (100) and (111)B GaAs substrates during metalorganic chemical vapor deposition has been investigated via scanning electron microscopy. The measured values of island density are 4–5 orders of magnitude smaller than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01ae60648979c29410285ac34543af95
https://doi.org/10.1063/1.116228
https://doi.org/10.1063/1.116228
Controlled III–V semiconductor cluster nucleation and epitaxial growth via electron‐beam lithography
Publikováno v:
Applied Physics Letters. 66:1343-1345
Controlled registration of InAs clusters and selective‐area growth of InAs thin films on GaAs substrates is achieved via a combined high dose electron beam lithography/metalorganic chemical vapor deposition technique. Auger electron spectroscopy an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d064945b76e18aeb8ca2d5d7d3fbc8c
https://doi.org/10.1063/1.113195
https://doi.org/10.1063/1.113195
Publikováno v:
Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84f5170db1cd654d89bf9cf9ca81254c
https://doi.org/10.7567/ssdm.1999.d-13-1
https://doi.org/10.7567/ssdm.1999.d-13-1
Autor:
R. E. Welser, O. A. Laboutin
Publikováno v:
Applied Physics Letters. 92:223103
Uncapped InN islands are grown on GaN buffer layers by low pressure metal-organic chemical vapor deposition. The buffer layer threading dislocation density is intentionally altered via the GaN growth pressure, as indicated by both the x-ray diffracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c469d479446b6e07d7a34ea507cc7981
https://doi.org/10.1063/1.2939216
https://doi.org/10.1063/1.2939216