Zobrazeno 1 - 10
of 232
pro vyhledávání: '"R. E. Viturro"'
Publikováno v:
Applied Rheology, Vol 14, Iss 4, Pp 190-196 (2004)
Scopus-Elsevier
Scopus-Elsevier
Rheological properties of xerographic liquid inks of different concentrations of solid particles have been tested. Generally we have found that viscosity decreases with increasing shear rate, i.e. the system is pseudoplastic as corresponds to the bre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e64374f921450a276c2da13103548151
https://doaj.org/article/554e77c1be4b477a975608ad488bb585
https://doaj.org/article/554e77c1be4b477a975608ad488bb585
Publikováno v:
physica status solidi (b). 211:869-883
We report high-pressure photoluminescence (PL) experiments on GaInP/AlGaInP laser structures and a comprehensive interpretation of the results via calculations based on the Model Solid Theory (MST) of Van de Walle et al. [1, 2]. This methodology allo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bc33d97bb608eaf8df38aa8134db1d4
https://doi.org/10.1002/(sici)1521-3951(199902)211:2<869::aid-pssb869>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199902)211:2<869::aid-pssb869>3.0.co
Autor:
I. M. Vitomirov, A. Raisanen, S. Chang, R. E. Viturro, L. J. Brillson, D. F. Rioux, P. D. Kirchner, G. D. Pettit, J. M. Woodall
Publikováno v:
Journal of Electronic Materials. 22:111-117
Effects of substrate doping and growth method on interface deep level formation and Schottky barrier height were investigated using low-energy catho doluminescence and soft x-ray photoemission spectroscopy. Our results reveal that for Au/GaAs(100) co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36671d0771385c89353edc352c7f3244
https://doi.org/10.1007/bf02665732
https://doi.org/10.1007/bf02665732
Autor:
Jerry M. Woodall, I. M. Vitomirov, Shu Chang, George David Pettit, Adam C. Finnefrock, A. Raisanen, Peter D. Kirchner, R. E. Viturro, Leonard J. Brillson
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:749-753
Low energy cathodoluminescence spectroscopy measurements of GaAs(100) surfaces prepared by thermal desorption of an As passivation layer reveal deep level transitions localized at the clean surfaces and metallized interfaces. These surface and interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4460431625ee1e0641a46204b7916410
https://doi.org/10.1116/1.578157
https://doi.org/10.1116/1.578157
Autor:
Shu Chang, R. E. Viturro, Leonard J. Brillson, J. L. Shaw, Jerry M. Woodall, Peter D. Kirchner
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:3803-3808
We report temperature‐dependent cathodoluminescence spectroscopy (CLS) and internal photoemission spectroscopy (IPS) studies of metal/molecular‐beam epitaxy GaAs(100) interfaces. For Au, Cu, and Al deposited at 90 K on clean, ordered GaAs(100) su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c69e4278cb580a7772956a5d9e26c256
https://doi.org/10.1116/1.576497
https://doi.org/10.1116/1.576497
Publikováno v:
Scopus-Elsevier
idUS. Depósito de Investigación de la Universidad de Sevilla
instname
idUS. Depósito de Investigación de la Universidad de Sevilla
instname
We report results from a statistical analysis of avalanches of cohesive powders in a slowly rotated drum. Interparticle adhesion, which diminishes the effect of inertia and whose magnitude strongly fluctuates in a local scale, makes avalanches in sli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b6fcba88b69f2d0a799f95759b9adc5
https://pubmed.ncbi.nlm.nih.gov/11690413
https://pubmed.ncbi.nlm.nih.gov/11690413
Publikováno v:
Applied Physics Letters. 56:69-71
Various models have been developed to address the problem of ‘‘Fermi level pinning,’’ i.e., why the barrier height varies much less than the Schottky metal work function limit. The most widely accepted mechanism is some variant of the metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71511dc22e2d6a5655af6b34f0620d88
https://doi.org/10.1063/1.102654
https://doi.org/10.1063/1.102654
Autor:
R. E. Viturro, George David Pettit, I. M. Vitomirov, Peter D. Kirchner, Leonard J. Brillson, Adam C. Finnefrock, A. Raisanen, Jerry M. Woodall
Publikováno v:
Physical review. B, Condensed matter. 46(20)
We present a comprehensive study of epitaxially grown and As-coated GaAs(100) surfaces as a function of As desorption temperature and background pressure. We have used low-energy electron diffraction to determine surface reconstruction, and core-leve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d51c2784cb86c11dc3c879b54f0e5f22
https://pubmed.ncbi.nlm.nih.gov/10003372
https://pubmed.ncbi.nlm.nih.gov/10003372
Publikováno v:
MRS Proceedings. 281
We report on the first growth of GaAs/Ga0.5In0.5P heterostructures by conventional molecular beam epitaxy using solid-source valved crackers to supply both the arsenic and the phosphorus fluxes. By regulating the group V fluxes with the cracker needl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1982b366c7e64553c806731a91c41cf
https://doi.org/10.1557/proc-281-49
https://doi.org/10.1557/proc-281-49
Autor:
George David Pettit, R. E. Viturro, Shu Chang, I. M. Vitomirov, Leonard J. Brillson, A. Raisanen, Peter D. Kirchner, Jerry M. Woodall
Publikováno v:
MRS Proceedings. 260
The influence of metallization and processing on Schottky barrier formation provides the basis for one of several fruitful approaches for controlling junction electronic properties. Interface cathodo-and photoluminescence measurements reveal that ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::398260d95929daa956320840f3e4d2d3
https://doi.org/10.1557/proc-260-449
https://doi.org/10.1557/proc-260-449