Zobrazeno 1 - 10
of 30
pro vyhledávání: '"R. E. Melgarejo"'
Publikováno v:
Solid State Communications. 149:2013-2016
High-k DyScO 3 linear dielectric films were considered as a buffer layer for the metal-ferroelectric-insulator-semiconductor (MFIS) structures with Aurivillius Bi 3.25 Nd 0.75 Ti 3 O 12 ferroelectric films. The DyScO 3 films on Si substrates were amo
Autor:
Ram S. Katiyar, Dillip K. Pradhan, Naba K. Karan, R. E. Melgarejo, Reji Thomas, Jose J. Saavedra-Arias, N. M. Murari, Ratnakar Palai
Publikováno v:
ECS Transactions. 13:363-371
DyScO3 linear dielectric films based metal-insulator-silicon (MIS); Bi3.25Nd0.75Ti3O12 non-linear dielectric films based metal-ferroelectric-metal (MFM); and DyScO3 insulator as a buffer layer for the metal-ferroelectric-insulator-silicon (MFIS) stru
Autor:
Rahul Singhal, Osbert Ovideo, Santander Nieto, Maharaj S. Tomar, Ram S. Katiyar, Suprem R. Das, R. E. Melgarejo
Publikováno v:
Journal of Power Sources. 164:857-861
Spinel powders of LiMn 1.99 Nd 0.01 O 4 have been synthesized by chemical synthesis route to prepare cathodes for Li-ion coin cells. The structural and electrochemical properties of these cathodes were investigated using X-ray diffraction (XRD), scan
Publikováno v:
Ferroelectrics. 328:99-102
Rare earth substituted Bi4Ti3O12, such as, Bi4−x Nd x Ti3O12 (BNT) are important materials for ferroelectric memory devices. BNT materials at different concentration of Nd substitution were synthesized by sol-gel process, and thin films were deposi
Publikováno v:
Microelectronics Journal. 36:574-577
Leakage current in ferroelectric devices is important because it affects the saturation. Rare earth substituted bismuth titanate (Bi 4 Ti 3 O 12 ) electroceramics has emerged as new material system for non-volatile ferroelectric memory. We synthesize
Publikováno v:
Integrated Ferroelectrics. 62:221-227
Rare earth substituted bismuth titanates are important materials for ferroelectric and microwave applications. Bi4-xNdxTi3O12 materials were synthesized for different compositions by sol-gel process and thin films were deposited on Pt (Pt/TiO2/SiO2/S
Publikováno v:
Ferroelectrics. 269:297-302
Bismuth-layered-structure materials with (Bi 2 O 2 ) 2+ layers intervening with pseudo perovskite blocks (M n m 1 R n O 3n+1 ) 2 m , where n = 1,2,3,4,5, M is mono, di, or trivalent ions such as Ba, Sr, Bi, Pb; R is tetra, penta-, or hexavalent ions
Publikováno v:
Integrated Ferroelectrics. 42:335-342
Nd doped Bi 4 Ti 3 O 12 layered materials were synthesized using a solution chemistry route. Thin films were deposited by spin coating. Powder and thin film samples were characterized by x-ray diffraction and Raman spectroscopy. Ferroelectric respons
Autor:
Sergey K. Filippov, Ram S. Katiyar, P. S. Dobal, K. A. Kuenhold, R. E. Melgarejo, Maharaj S. Tomar
Publikováno v:
Materials Science and Engineering: B. 83:89-96
Ferroelectric memory was observed in {1- x SrBi 2 Ta 2 O 9 - x Bi 3 TiTaO 9 } material for the composition x =0.3. Thus, there is interest in the investigation of detailed properties of this material system. We report on the structural and electrical
Publikováno v:
Journal of Materials Research. 16:903-906
Zn1–xMgxO is an important material for optoelectronic devices. We synthesized this material using a solution-based route. We investigated in detail the structural behavior of this material system using x-ray diffraction and Raman spectroscopy. Mg s