Zobrazeno 1 - 10
of 42
pro vyhledávání: '"R. E. Makon"'
Autor:
O. Landolt, R. E. Makon, T. Schweiger, J. Schulze, D. Knoll, S. Lischke, B. Krueger, Edgar Krune, O. Hidri
Publikováno v:
CICC
This paper presents an optically clocked 10 GS/s-sampler monolithically integrated in a photonic 0.25 μm SiGe-BiCMOS technology, which uses an ultra-stable optical pulse train generated by a hybrid mode-locked laser to sample an electrical signal. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a477b449c4f84db79527f340ca2ae748
https://doi.org/10.1109/cicc.2017.7993673
https://doi.org/10.1109/cicc.2017.7993673
Autor:
R. Driad, Volker Hurm, A. G. Steffan, H.-G. Bach, Urban Westergren, Jie Li, Colja Schubert, M. Chacinski, R. H. Derksen, R. E. Makon
Publikováno v:
IEEE Communications Magazine. 51:136-144
In 2010, the standard for 100GbE was approved, which specifies the transmission of 100 Gb/s via 4 wavelength channels of 25 Gb/s each. A solution based on a 100 Gb/s single wavelength channel is capable of significant cost reductions should the requi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08a9f8971bd375e09cbfc5aef1a05159
https://doi.org/10.1109/mcom.2013.6515058
https://doi.org/10.1109/mcom.2013.6515058
Autor:
H. Walcher, R. Losch, Michael Schlechtweg, R. E. Makon, Volker Hurm, Rachid Driad, J. Rosenzweig
Publikováno v:
IEEE Transactions on Electron Devices. 58:2604-2609
It is now clear that 112-Gb/s data rate is the next step in the network evolution (100-Gb/s Ethernet). Due to its high speed and high breakdown voltage, the InP double-heterojunction bipolar transistor (DHBT) technology is particularly suited for sig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b87e3b0a9f882cb018bfbe5655fcf4e0
https://doi.org/10.1109/ted.2011.2157927
https://doi.org/10.1109/ted.2011.2157927
Autor:
Rachid Driad, J. Rosenzweig, Sergei Popov, Anders Djupsjöbacka, Jie Li, Zhuo Li, H. Walcher, G.G. Mekonnen, Ke Wang, A. G. Steffan, Gunnar Jacobsen, Heinz-Gunter Bach, R. E. Makon, Ari T. Friberg
Publikováno v:
Optics Communications. 284:782-786
100 Gb/s on-off keying (OOK) transmission over 212 km installed standard single-mode fibers using an Indium Phosphide (InP)-based electrical clock-data-recovery (CDR) and demultiplexer module was demonstrated. 5.5 × 10 − 11 bit error rate (BER) pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2723e41d57211dba60a54165f1bd40a0
https://doi.org/10.1016/j.optcom.2010.09.070
https://doi.org/10.1016/j.optcom.2010.09.070
Autor:
Volker Hurm, M. Chacinski, R. E. Makon, B Stoltz, Andreas G. Steffan, Urban Westergren, Rachid Driad
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 16:1321-1327
Components of a 100 Gb/s transmitter with electrical time-division multiplexing are presented as following: electrical multiplexer, driver amplifier, and large-bandwidth distributed feedback-traveling-wave electro-absorption modulator module. The per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b36bc689eaa037b7312f0328e43f0c82
https://doi.org/10.1109/jstqe.2009.2038239
https://doi.org/10.1109/jstqe.2009.2038239
Publikováno v:
Journal of Crystal Growth. :1001-1004
We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP substrates for high-speed data communication. The technology is based on DHBTs with an InP emitter, a graded InGaAs:C base and a composite InGaAs/InGa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b886b214cc5c1a1c81eb0539f8ce8228
https://doi.org/10.1016/j.jcrysgro.2006.11.243
https://doi.org/10.1016/j.jcrysgro.2006.11.243
Publikováno v:
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.
A novel monolithic opto-electronic clock converter integrated in a photonic SiGe-BiCMOS technology is presented, which turns an ultrashort optical pulse train generated by a hybrid mode-locked laser into a low-jitter electrical square wave with sharp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f4937be74d4567cea030da4807358e
https://doi.org/10.1109/bctm.2015.7340585
https://doi.org/10.1109/bctm.2015.7340585
Autor:
Rachid Driad, Michael Schlechtweg, K. Schneider, Michael Mikulla, U. Nowotny, R. E. Makon, Rudiger Quay, G. Weimann, Rolf Aidam
Publikováno v:
IEICE Transactions on Electronics. :931-936
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The InGaAs/InP DHBTs were grown by MBE and fabricated using conventional process techniques. Devices w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14d8b2101be28c9b38207ea05fe73f27
https://doi.org/10.1093/ietele/e89-c.7.931
https://doi.org/10.1093/ietele/e89-c.7.931
Publikováno v:
physica status solidi c. 3:456-460
In this paper, we report the development and performance of a complete InP-based DHBT manufacturable technology from material growth to device and integrated circuits realizations. The InGaAs/InP DHBTs were grown in a multi-wafer solid phosphorus MBE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b949d5d4c45311dc76f644d5815605
https://doi.org/10.1002/pssc.200564102
https://doi.org/10.1002/pssc.200564102
Publikováno v:
IEEE Electron Device Letters. 32:1059-1061
This letter reports the potential of an InP-based double-heterojunction bipolar transistor (DHBT) using a thin highly doped n+-InP layer inserted at the base-collector junction. Molecular-beam-epitaxy-grown abrupt pulse-doped InP-InGaAs-InP DHBTs ens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2767211b70d04da7a3c4a130bb7ebbdf
https://doi.org/10.1109/led.2011.2151173
https://doi.org/10.1109/led.2011.2151173