Výsledky vyhledávání - "R. E. Kunkov"

Long-wave infrared InAs0.6Sb0.4 photodiodes grown onto n-InAs substrates

Autor: T. C. Lukhmyrina, A. A. Klimov, B A Matveev, A.A. Lavrov, N M Lebedeva, R. E. Kunkov, M A Remennyi

Publikováno v: Journal of Physics: Conference Series. 1851:012019

The results of a study of multilayer photodiodes based on InAs1- x Sb x solid solutions (0.3 < x λ 0.1 ≈ 11 μm at room temperature are presented. The current-voltage and spectral characteristics of photosensitivity and electroluminescence were an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::11f7ec3b94404c5a92ab3c306a672f49
https://doi.org/10.1088/1742-6596/1851/1/012019

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Room temperature mid-IR two-color photodiodes with InAs and InAs0.9Sb0.1 absorbing layers

Autor: B. A. Matveev, M A Remennyi, N M Lebedeva, R. E. Kunkov, T. S. Lukhmyrina, A. A. Klimov

Publikováno v: Journal of Physics: Conference Series. 1697:012180

Narrow gap heterostructures consisting of two double heterostructures (N-InAsSbP/n-InAs/P-InAsSbP and P-InAsSbP/n-InAs0.9Sb0.1/N-InAsSbP) grown sequentially onto a n+-InAs substrate and further processed into a two-color photodiode with individual se

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1de490c145c5f490797851152754151f
https://doi.org/10.1088/1742-6596/1697/1/012180

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Photoelectric properties of heterostructures based on InAsSbx solid solutions (0.3 ˂x ˂0.35)

Autor: R. E. Kunkov, A. A. Klimov, N M Lebedeva, M. A. Remennyy, T. C. Lukhmyrina, B. A. Matveev

Publikováno v: Journal of Physics: Conference Series. 1695:012077

The results of a study of multilayer p-n heterostructures based on InAsSbx solid solution (0.3 ˂ x ˂0.35), with a long-wavelength photosensitivity boundary of λ0.1 ≈ 9.5 μm at room temperature are presented. The current-voltage and spectral cha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba8fb7ddba30456b87d799f9cbe15522
https://doi.org/10.1088/1742-6596/1695/1/012077

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Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure

Autor: M A Remennyi, A. A. Klimov, A.A. Usikova, S. A. Karandashev, A.A. Lavrov, R. E. Kunkov, B. A. Matveev, T. S. Lukhmyrina

Publikováno v: Journal of Physics: Conference Series. 1410:012028

N-InAsSbP/InAs/P-InAsSbP double heterostructures have been grown onto n+-InAs substrate and further processed into 2×2 photodiode array containing no n+-InAs. C-V, spectral response as well as mid-IR photoluminescence and electroluminescence in the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50f477f0c96ebf5dfeec135364c77c0a
https://doi.org/10.1088/1742-6596/1410/1/012028

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