Zobrazeno 1 - 10
of 13
pro vyhledávání: '"R. E. Kremer"'
Autor:
R. E. Kremer, Marek Skowronski
Publikováno v:
ResearcherID
Infrared absorption measurements in the 600–1300 cm−1 range of oxygen doped bulk GaAs crystals are presented. Nine different absorption bands have been observed and the effect of thermal treatment on their intensity investigated. Short term annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daf385265d83bcdd67fea397956c277f
https://doi.org/10.1063/1.347513
https://doi.org/10.1063/1.347513
Publikováno v:
Physics of Narrow Gap Semiconductors ISBN: 9783540111917
The method of helicon-excited EPR is used to measure the dynamic magnetic susceptibility of Hg1−xMnxSe as a function of x, using 35 GHz microwaves. For low x, six well-resolved hyperfine structure lines are observed, but fine structure is not resol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd0a095e9f23f230f1f77e13bc6c3229
https://doi.org/10.1007/3-540-11191-3_53
https://doi.org/10.1007/3-540-11191-3_53
Publikováno v:
Journal of Materials Research. 5:1468-1474
We have developed a new growth process for GaAs that combines advantages found in several methods currently in commercial use, while at the same time minimizing many of the problems inherent in these presently used processes. The new technique, a for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::463a87426b41ca66164eb32b5de1d696
https://doi.org/10.1557/jmr.1990.1468
https://doi.org/10.1557/jmr.1990.1468
Publikováno v:
Applied Physics Letters. 58:1545-1547
A series of isochronal annealing experiments have been performed on bulk GaAs crystals doped with oxygen. Two centers induced by oxygen, the isolated oxygen interstitial (Oi) and the gallium‐oxygen‐gallium (Ga‐O‐Ga) defect, most likely due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fcb64770aaf89770dc07dfdecb38e02
https://doi.org/10.1063/1.105173
https://doi.org/10.1063/1.105173
Publikováno v:
Applied Physics Letters. 57:902-904
Experimental results of photoexcitation and thermal deactivation of localized vibrational mode absorption of the oxygen‐vacancy complex in GaAs are reported. Two levels within the energy gap are observed, one located at 0.14 eV and the other betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15f61d00c0e113586730b008260da149
https://doi.org/10.1063/1.103399
https://doi.org/10.1063/1.103399
Publikováno v:
Journal of Applied Physics. 62:2432-2438
We describe an experimental setup designed to study photoconductive transients in semi‐insulating materials. The method, known as photoinduced transient spectroscopy, is based on a digital signal‐averaging technique. Although this digital method
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::252b060ddf37a9407dacd1e4a5ec98f6
https://doi.org/10.1063/1.339476
https://doi.org/10.1063/1.339476
Autor:
J. K. Furdyna, R. E. Kremer
Publikováno v:
Physical Review B. 32:5591-5599
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38cc25fb637fa29ea6205438cd7baeab
https://doi.org/10.1103/physrevb.32.5591
https://doi.org/10.1103/physrevb.32.5591
Autor:
F. G. Moore, R. E. Kremer
Publikováno v:
Applied Physics Letters. 52:1314-1316
The diffusion of mercury in HgTe‐related materials has played a major role in the development of devices utilizing the unique features of this family of materials. The study of mercury diffusion, however, has been limited to diffusion perpendicular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::556c0b4336947e742f30ae0bc3355803
https://doi.org/10.1063/1.99146
https://doi.org/10.1063/1.99146
Autor:
V. B. Leigh, R. E. Kremer
Publikováno v:
MRS Proceedings. 90
We have used two complementary techniques to study deep trapping levels in CdTe single crystals. Samples of undoped, semi-insulating material and p-type material doped with phosphorus or cesium have been examined using transient spectroscopic techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e09d1a23f5bb9d5a390669be36fd6858
https://doi.org/10.1557/proc-90-241
https://doi.org/10.1557/proc-90-241
Publikováno v:
MRS Proceedings. 144
We have developed a process to grow both undoped, semi-insulating (SI) and silicon-doped, semiconducting (SC) GaAs using a vertical Bridgman method. The technique combines advantages of both liquid encapsulated Czochralski (LEC) and horizontal Bridgm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da843de270d6199bc22446a28eab5aa
https://doi.org/10.1557/proc-144-15
https://doi.org/10.1557/proc-144-15