Zobrazeno 1 - 10
of 15
pro vyhledávání: '"R. E. Klinger"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:3401-3406
MetaModeTM reactive sputtering was employed to produce optical quality aluminum oxide films at rates an order of magnitude higher than those possible with conventional reactive magnetron sputtering. System pressure, reactive‐to‐nonreactive gas fl
Publikováno v:
World Environmental and Water Resources Congress 2009.
Publikováno v:
Journal of Vacuum Science and Technology. 14:219-222
Lead oxide films with an average thickness of 50 μm were deposited onto water‐cooled, polished aluminum substrates by reactive ion plating. Pure lead was evaporated into an rf discharge sustained by either pure O2 or an Ar+O2 mixture. All films we
Publikováno v:
Chemical Physics Letters. 62:46-50
Auger and X-ray photoelectron spectroscopies have been used to investigate preferential sputtering effects in stabilized cubic 8 mole ??? Y 2 O 3 -doped ZrO 2 films. The results show that oxygen is preferentially removed by Ar + ion bombardment while
Publikováno v:
Journal of Vacuum Science and Technology. 14:177-180
The deposition rate, chemistry, microstructure, and optical and electrical characteristics of rf sputter deposited Y2O3‐doped ZrO2 films have been investigated as a function of applied substrate bias VS. Some preliminary results on Y2O3‐doped CeO
Autor:
J. E. Greene, R. E. Klinger
Publikováno v:
Journal of Applied Physics. 54:1595-1604
The reactive ion etching of (100) GaAs in pure CCl2F2 and CF4 discharges, as well as in mixtures of Ar and CCl4, CCl2F2, or CF4, has been investigated. Anisotropic etching with removal rates R of up to 800 nm/min have been obtained in reactive discha
Autor:
R. E. Klinger, J. E. Greene
Publikováno v:
Applied Physics Letters. 38:620-622
The reactive ion etching of (100) GaAs in CCl2F2 and mixed CCl2F2+Ar discharges has been investigated. Anisotropic etching with removal rates R of 0.8 mm/min have been obtained in pure CCl2F2 discharges operated at 5.3 Pa (40 mTorr) and −3 kV, wher
Publikováno v:
Applied Physics Letters. 36:930-932
Polycrystalline Si films with average grain sizes of ∼8 μm have been grown by laser‐induced chemical vapor deposition from SiCl4. A cw CO2 laser operated at 10.6 μm was used to provide local heating of quartz substrates in an otherwise cool rea
Autor:
P. Swab, R. E. Klinger
Publikováno v:
MRS Proceedings. 115
Ultramicrotomy is a technique for cutting cross-sections of material which was originally used by biologists for soft tissue analysis. With only a few changes to accommodate the hard dielectric coatings and substrates, the technique may be used to pr
Autor:
P. Swab, R. E. Klinger
Publikováno v:
Annual Meeting Optical Society of America.
Thin cross sections of titania-silica and zirconia-silica quarterwave stacks were prepared by ultramicrotomy and examined by transmission electron microscopy. Ultramicrotomy is a standard biological sample preparation technique originally developed f