Zobrazeno 1 - 10
of 16
pro vyhledávání: '"R. E. Eby"'
Publikováno v:
International Journal of Mass Spectrometry and Ion Physics. 36:301-316
Secondary ion spectrometry has been used to follow the course of typical thermal emission mass spectrometric analyses of U samples loaded on single anion resin beads. It was found that U stayed almost entirely in the carbon matrix remaining after the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6875c82867cc73c2defb4673472178ed
https://doi.org/10.1016/0020-7381(80)85064-9
https://doi.org/10.1016/0020-7381(80)85064-9
Publikováno v:
Analytical Chemistry. 53:13-17
Secondary ion mass spectrometry (SIMS) has been used for the rapid, accurate analysis of B and Li in various nuclear materials. The problem of sample charging observed in the analysis of insulator materials has been overcome by distributing the sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23a9cd39daa5c95f61d51cb348774528
https://doi.org/10.1021/ac00224a006
https://doi.org/10.1021/ac00224a006
Publikováno v:
Metallurgical Transactions A. 11:783-790
In-situ formed oxide coatings have been proposed as hydrogen permeation barriers for candidate materials in heat exchangers and for hydrogen containment. In this regard oxides formed by oxidation of Incoloy 800 in 243 and 532 torr (1 torr = 133.3 Pa)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47a23bfbc196cea4923f2ca40e618cbd
https://doi.org/10.1007/bf02661207
https://doi.org/10.1007/bf02661207
Publikováno v:
Analytical Letters. 7:563-574
The method uses basic anion resin to adsorb plutonium and uranium from 7–8 M HNO3 solutions containing dissolved spent reactor fuels. After equilibrating the resin with the solution, a single bead is used to determine the isotopic composition of pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f8758f3fb271fc5224542af0ad0f355
https://doi.org/10.1080/00032717408058789
https://doi.org/10.1080/00032717408058789
Publikováno v:
Journal of Applied Physics. 59:1323-1333
The absorption of CO2 laser radiation in p‐type GaAs is dominated by direct free‐hole transitions between states in the heavy‐ and light‐hole bands. For laser intensities on the order of 10 MW/cm2, we report that the absorption associated wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::859b60da55043b7ff4239d105795be55
https://doi.org/10.1063/1.336526
https://doi.org/10.1063/1.336526
Publikováno v:
Analytical Letters. 12:1123-1135
Ion implantation standards were used to calibrate a spark source mass spectrometer (SSMS) near surface region analytical method. Standards were prepared by ion implanting 11B+ at 100 keV into Zircaloy-2 at doses in the 3 × 1015 to 3 × 1016 11B atom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b235b48693bbcf30b4469acb1242e71c
https://doi.org/10.1080/00032717908082540
https://doi.org/10.1080/00032717908082540
Pulsed excimer laser annealing of ion implanted silicon: Characterization and solar cell fabrication
Autor:
R. F. Wood, J. W. Cleland, R. D. Westbrook, D. H. Lowndes, J. A. Nilson, W. H. Christie, R. E. Eby, S. C. Dass, Gerald Earle Jellison Jr, Jagdish Narayan
Publikováno v:
Applied Physics Letters. 41:938-940
A pulsed ultraviolet excimer laser (XeCl, 308‐nm wavelength, ∼41‐ns pulse duration) has been sucessfully used for laser annealing of both boron‐ and arsenic‐implanted silicon, and for formation of high quality p‐n junctions. Transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8e394379cc345e54636001b4ba0534f
https://doi.org/10.1063/1.93342
https://doi.org/10.1063/1.93342
Publikováno v:
Science. 216:296-298
An innovative ultrasensitive technique was used for lead isotopic analysis of individual zircons extracted from granite core samples at depths of 960, 2170, 2900, 3930, and 4310 meters. The results show that lead, a relatively mobile element compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0aa9ac093155c5c84259a7b4c22f321d
https://doi.org/10.1126/science.216.4543.296
https://doi.org/10.1126/science.216.4543.296
Autor:
George A. Rozgonyi, Volkan H. Ozguz, O. W. Holland, R. E. Eby, J. J. Wortman, Jagdish Narayan
Publikováno v:
Applied Physics Letters. 43:957-959
Annealing of ion implantation damage and concomitant electrical activation of dopants, depth profiles, and lattice location of dopants have been studied in arsenic and boron‐implanted specimens after rapid thermal annealing. A ‘‘complete’’
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f36a6bbbad7e5f2dce2010b2743b07c
https://doi.org/10.1063/1.94200
https://doi.org/10.1063/1.94200
Autor:
W. H. Christie, J. A. Nilson, J. W. Cleland, S. C. Dass, D. H. Lowndes, R. D. Westbrook, Gerald Earle Jellison Jr, Jagdish Narayan, R. F. Wood, R. E. Eby
Publikováno v:
MRS Proceedings. 13
A pulsed ultraviolet excimer laser (XeCl, 308 nm wavelength, 40 nsec FWHM pulse duration) has been successfully used for laser annealing of both boron- and arsenic-implanted silicon. TEM, SIMS, and sheet electrical measurements are used to characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::183a2786fe0cb0e02c1f0c44ce271135
https://doi.org/10.1557/proc-13-407
https://doi.org/10.1557/proc-13-407