Zobrazeno 1 - 10
of 27
pro vyhledávání: '"R. E. Butera"'
Autor:
Ting Xie, Michael Dreyer, David Bowen, Dan Hinkel, R. E. Butera, Charles Krafft, Isaak Mayergoyz
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055914-055914-5 (2018)
Scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying tungsten films have been conducted. An asymmetry of the tunneling current with respect to the change of the direction of the bias current through a tungste
Externí odkaz:
https://doaj.org/article/25b505796b65414f9035e641496a03a5
Autor:
Ting Xie, Michael Dreyer, David Bowen, Dan Hinkel, R. E. Butera, Charles Krafft, Isaak Mayergoyz
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125205-125205-6 (2017)
A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented. A voltage compensation circuit based on this potentiometry technique is developed and employed to maintain a desi
Externí odkaz:
https://doaj.org/article/d915f4662c9643599a9a896803fbd76d
Publikováno v:
ACS Applied Materials & Interfaces. 13:41275-41286
Atomically precise, δ-doped structures forming electronic devices in Si have been routinely fabricated in recent years by using depassivation lithography in a scanning tunneling microscope (STM). While H-based precursor/monatomic resist chemistries
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::749c4a51dae0fa4c5b6326e8f07cf712
https://doi.org/10.1021/acsami.1c10616
https://doi.org/10.1021/acsami.1c10616
Publikováno v:
Langmuir. 37:7194-7202
The reactions of boric acid and 4-fluorophenylboronic acid with H- and Cl-terminated Si(100) surfaces in solution were investigated. X-ray photoelectron spectroscopy (XPS) studies reveal that both molecules react preferentially with Cl-Si(100) and no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::473f2ba414ac0e0fdfd7e919360744e7
https://doi.org/10.1021/acs.langmuir.1c00763
https://doi.org/10.1021/acs.langmuir.1c00763
Autor:
Sungha Baek, George T. Wang, Yifei Mo, Azadeh Farzaneh, Shashank Misra, R. E. Butera, Kevin Dwyer, Quinn Campbell, Matthew S. Radue, Andrew Baczewski, Ezra Bussmann
Publikováno v:
The Journal of Physical Chemistry C. 125:11336-11347
The adsorption of AlCl$_{3}$ on Si(100) and the effect of annealing the AlCl$_{3}$-dosed substrate was studied to reveal key surface processes for the development of atomic-precision acceptor-doping techniques. This investigation was performed via sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0565f37d092939932d277de7364f26e7
https://doi.org/10.1021/acs.jpcc.1c00691
https://doi.org/10.1021/acs.jpcc.1c00691
Autor:
Michael Dreyer, R. E. Butera, Adam L. Friedman, Isaak D. Mayergoyz, David Bowen, Patrick J. Taylor, Siddharth Tyagi, Charlie Krafft, Dan Hinkel
Publikováno v:
IEEE Magnetics Letters. 12:1-4
Spin-momentum locking in the surface mode of topological insulators leads to the surface accumulations of spin-polarized electrons caused by bias currents through topological insulator samples. It is demonstrated in this letter that surface spin-pola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a4431761a9299452bb24b95f43ddba2
https://doi.org/10.1109/lmag.2021.3065642
https://doi.org/10.1109/lmag.2021.3065642
Autor:
Gregory M. Stephen, Ivan Naumov, Aubrey T. Hanbicki, Pratibha Dev, Jennifer DeMell, Adam L. Friedman, Isaak D. Mayergoyz, Patrick J. Taylor, Michael Dreyer, Siddharth Tyagi, Owen Vail, R. E. Butera
Publikováno v:
The Journal of Physical Chemistry C. 124:27082-27088
Bi2Se3, widely studied as a topological insulator, has great potential for applications in low-power electronics and quantum computing. Intrinsic doping, however, presents a persistent challenge, l...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64424613afa6e80221a21467a298c509
https://doi.org/10.1021/acs.jpcc.0c07176
https://doi.org/10.1021/acs.jpcc.0c07176
Publikováno v:
The Journal of Physical Chemistry A. 123:10793-10803
We investigated STM-induced chlorine desorption and lithographic patterning of Cl-terminated Si(100)-(2x1) surfaces at sample temperatures from 4 K to 600 K. STM lithography has previously focused on hydrogen-based chemistry for donor device fabricat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8408954772643e7c68c585cdea7379ac
https://doi.org/10.1021/acs.jpca.9b07127
https://doi.org/10.1021/acs.jpca.9b07127
Publikováno v:
New Journal of Physics, Vol 19, Iss 11, p 113023 (2017)
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leak
Externí odkaz:
https://doaj.org/article/f061a5e27d9c4513be0c2587247214b9
Atomically precise dopant arrays in Si are being pursued for solid-state quantum computing applications. We propose a guided self-assembly process to produce atomically precise arrays of single dopant atoms in lieu of lithographic patterning. We leve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b524f30b5c8502ccd3a7300898a627d
http://arxiv.org/abs/2106.10556
http://arxiv.org/abs/2106.10556
