Zobrazeno 1 - 9
of 9
pro vyhledávání: '"R. E. Belford"'
Autor:
Tanya Gupta, R. E. Belford, Leonard A. Annetta, Marina Shapiro, Zulma A. Jiménez, Derek A. Behmke, Evelyn Brannock, David Kerven, Robert Lutz, Julia Paredes, Richard Pennington, John Rose, Michael Deiters, Matthew Camp, Anastasiya Golovan, R. Lamichhane, A. Maltese, Aaron R. Van Dyke, Julian R. Silverman, Claudia Bode, Bala Subramaniam, Bonnie L. Hall, Kyle D. Watson, Tracy Covey, Dmitri Kilin, Svetlana Kilina, Jack D. Polifka, Thomas A. Holme, Brian McBurnett, Mercy Adoma Fosu, Semhar Michael, Yu Kay Law, Madhu Mahalingam, Elisabeth A. Morlino, Elisabetta Fasella, Matthew W. Van Duzor, Jonathan C. Rienstra-Kiracofe, Mark Blaser
'This book is about Technology Integration in Chemistry Education and Research (TICER)'--
Autor:
S. Sood, R. E. Belford
Publikováno v:
Microsystem Technologies. 15:407-412
A pre-wafer-bonding remote-plasma treatment is presented as a route to hydrophilic elevated temperature wafer bonding. This particular remote plasma technique was used as a non-etching surface activation technique. We report a post anneal surface ene
Publikováno v:
Journal of Applied Physics. 95:2792-2796
Device characteristics and analyses are reported for strained silicon n- and p-channel, metal-oxide-semiconductor field-effect transistors at five temperatures ranging from 296 to 367 K. Both partially depleted and bulk architectures were investigate
Publikováno v:
Journal of Applied Physics. 94:4102-4107
Device characteristics and analysis are reported for strained silicon n- and p- channel partially depleted metal oxide semiconductor field effect transistors (MOSFETs) at 300 K. The devices were fabricated commercially on standard silicon-based silic
Autor:
R. E. Belford, S. Sood
Publikováno v:
Electrochemical and Solid-State Letters. 10:H145
Remote plasma activation is presented here as a surface technique allowing hydrophilic wafer bonding at elevated temperatures. Prebonding remote plasma treatment resulted in a marked improvement over other techniques, increasing bonding energy for bo
Autor:
S. Sood, A. Acosta, R. E. Belford, L. A. Bosworth, A. Teren, B. P. Guo, Q. Xu, J. S. Zell, A. A. Thrift
Publikováno v:
Journal of Applied Physics. 100:064903
Results are reported for Si p-channel metal oxide semiconductor field effect transistors (pMOSFETs) subjected to a combination of tensile and compressive strains in different directions. This combination strain is reported and discussed. Results are
Publikováno v:
Sensors and Actuators. 11:387-398
The application of thick-film techniques to pH electrode construction is reported. The performance and general aspects of their operation are discussed, as a function of their construction. Particular attention is paid to the fundamental factors affe
Publikováno v:
Chemical Sensors ISBN: 9789401091565
The realization of a standard chemical or ion-selective electrode in a thick film (T-F) or ‘hybrid’ form is not merely an engineering exercise. Many problems, both chemical and physical in nature, have to be solved. A general guide for the develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::babd18b66e41bfa9c1f9b8139fef7cf9
https://doi.org/10.1007/978-94-010-9154-1_11
https://doi.org/10.1007/978-94-010-9154-1_11
Autor:
A. E. Owen, R. E. Belford
Publikováno v:
Glasses and Glass-Ceramics ISBN: 9780412276903
The growth in industrial automated systems for quality control and product analysis has caused an upsurge in the use of ion-selective electrodes (ISEs). Continuous quality testing and feedback information has progressed from wet chemical analysis to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc4b6fea9390d4796145398ea98f6287
https://doi.org/10.1007/978-94-009-0817-8_9
https://doi.org/10.1007/978-94-009-0817-8_9