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Publikováno v:
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings.
A low temperature reactive ion-plasma sputtering technique is used to obtain a zinc diffusion source in the form of zinc silicate glass (ZSG). Diffusion parameters of Zn in GaAs are evaluated in the temperature range of 470-700/spl deg/C. The develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eee09e26685f48e9497dba1b9536adfb
https://doi.org/10.1109/smicnd.1997.651598
https://doi.org/10.1109/smicnd.1997.651598
