Zobrazeno 1 - 10
of 97
pro vyhledávání: '"R. Dylewicz"'
Publikováno v:
Applied Physics B. 107:393-399
We describe the fabrication and characterization of a randomly etched gallium nitride (GaN) surface for enhancing light extraction from light-emitting diodes. Our technique uses silica spheres as nano-targets in a sputter-etch process and produces a
Autor:
R. Dylewicz, Danuta Kaczmarek, Frank Placido, Jaroslaw Domaradzki, Eugeniusz Prociow, Damian Wojcieszak, Steffen Lapp
Publikováno v:
Open Physics, Vol 9, Iss 2, Pp 349-353 (2011)
In this work, the influence of Tb-doping on structure, and especially hardness of nanocrystalline TiO2 thin films, has been described. Thin films were formed by a high-energy reactive magnetron sputtering process in a pure oxygen atmosphere. Undoped
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:882-890
Inductively coupled plasma dry etching for the fabrication of fine-pitch patterns in a wide range of InP-based materials has been developed. The effect of plasma chemistry (the N2 content in the total Cl2/Ar/N2 gas mixture) on the degree of undercut
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:817-822
The ability of thin polythiophene layers to dissipate accumulated charge in the electron beam lithography (EBL) of wide bandgap semiconductors, such as zinc oxide and gallium nitride, is demonstrated. A quick and inexpensive processing method is demo
Autor:
Paul W. Fry, Richard A. Hogg, A. Tahraoui, R. Dylewicz, R. J. Airey, S. Patela, Peter J. Parbrook
Publikováno v:
Journal of Electronic Materials. 38:635-639
Optimized fabrication of submicron-sized features in gallium nitride (GaN) with the use of inductively coupled plasma (ICP) dry etching, based on SiCl4/Cl2/Ar gas mixture, is presented. Dense periodic patterns, i.e., 400-nm-period gratings, were tran
Publikováno v:
Micron. 40:37-40
Due to the differences in etch-pit morphologies, chemical etching offers a possibility to determine densities of dislocations in respect to their type. In the present paper we propose a method, which implements a simple shape-from-shading procedure,
Autor:
A. Tahraoui, R. J. Airey, S. Patela, Peter J. Parbrook, R. Dylewicz, Richard A. Hogg, Paul W. Fry
Publikováno v:
physica status solidi c. 4:2634-2637
In this paper we report the optimization of the fabrication process of a grating coupler, which is fully integrated with a GaN planar waveguide. To our knowledge, this is the first report of a grating-assisted optical coupler in gallium nitride. ICP
Publikováno v:
Optical Materials. 27:1501-1505
Optical properties of silica–titania thin films prepared by the sol–gel technique are presented. The layers were deposited on glass slides or silica wafers by a dip coating process. Samples were prepared from different mixtures of silica and tita
Publikováno v:
IEEE Photonics Technology Letters. 23:82-84
The 10-GHz passively mode-locked AlGaInAs/InP 1.55- μm extended cavity lasers integrated with optimized surface-etched distributed Bragg mirrors have been fabricated. A quantum-well intermixing process was used to provide low-absorption loss grating
Publikováno v:
IEEE Photonics Technology Letters. 22:1503-1505
We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55- lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low-scattering losses and accurate wavelength control. The lasers produce 4.46-