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pro vyhledávání: '"R. Driad"'
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Autor:
R. Driad, Volker Hurm, A. G. Steffan, H.-G. Bach, Urban Westergren, Jie Li, Colja Schubert, M. Chacinski, R. H. Derksen, R. E. Makon
Publikováno v:
IEEE Communications Magazine. 51:136-144
In 2010, the standard for 100GbE was approved, which specifies the transmission of 100 Gb/s via 4 wavelength channels of 25 Gb/s each. A solution based on a 100 Gb/s single wavelength channel is capable of significant cost reductions should the requi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08a9f8971bd375e09cbfc5aef1a05159
https://doi.org/10.1109/mcom.2013.6515058
https://doi.org/10.1109/mcom.2013.6515058
Autor:
R. Driad, W. R. McKinnon, James A. Gupta, S.P. McAlister, D. Coulas, J.P. Noad, Robin L. Williams
Publikováno v:
Journal of Crystal Growth. 231:48-56
GaN y As 1− y films were grown on GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using trimethylgallium (TMGa), tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (DMHy). Nitrogen incorporation in the films was determined by high-res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e46c60ab3ca692d8c14842b38154aad
https://doi.org/10.1016/s0022-0248(01)01446-4
https://doi.org/10.1016/s0022-0248(01)01446-4
Publikováno v:
Semiconductor Science and Technology. 16:171-175
In this paper we compare the characteristics of InP-based double-heterojunction bipolar transistors (DHBTs) with different emitter layer designs. The offset and saturation voltages can be significantly reduced by inserting an InP layer between a larg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ee40ddd0ecb97af54fdd52079b20656
https://doi.org/10.1088/0268-1242/16/3/309
https://doi.org/10.1088/0268-1242/16/3/309
Publikováno v:
Journal of Electronic Materials. 29:L33-L36
In this letter, we report the effect of UV-ozone treatments on the electrical characteristics of InGaAs/InP heterostructure bipolar transistors (HBTs). For treatments of less than 10 min, the HBT’s current gain increased with the UV-ozone exposure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4374b55e8ccf358bc3809c1e46c745ec
https://doi.org/10.1007/s11664-000-0127-z
https://doi.org/10.1007/s11664-000-0127-z
Publikováno v:
Solid-State Electronics. 43:1445-1450
The passivation of the exposed semiconductor surfaces in a device is necessary to ensure good device performance. In this study we examine how different surface treatments and geometric device designs can be used to improve the dc performance of InP-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b498a77df924709409285d36c1812a4
https://doi.org/10.1016/s0038-1101(99)00087-8
https://doi.org/10.1016/s0038-1101(99)00087-8
Publikováno v:
Microwave and Optical Technology Letters. 21:235-238
We report an improved thin-emitter InGaAs/InP heterostructure bipolar transistor where the InGaAs base layer is contacted through the thin InP emitter. The InP passivation layer avoids the degradation of electrical characteristics observed in InGaAs/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec7934f5ac9687b54ac8827f44daa563
https://doi.org/10.1002/(sici)1098-2760(19990520)21:4<235::aid-mop1>3.0.co
https://doi.org/10.1002/(sici)1098-2760(19990520)21:4<235::aid-mop1>3.0.co
Publikováno v:
Journal of Applied Physics. 82:5231-5234
In this article we show the effect on the dc and rf transport characteristics of dipole doping at the collector heterojunction in an InP/InGaAs double heterojunction bipolar transistor. We show how the switching characteristics of devices with abrupt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee372c31327ef8b6eb633e62fdce1f1b
https://doi.org/10.1063/1.366388
https://doi.org/10.1063/1.366388
Publikováno v:
Journal of Applied Physics. 80:2300-2304
Highly carbon‐doped Ga0.47In0.53As layers grown by chemical beam epitaxy have been exposed to a deuterium plasma. Deuterium diffusion profiles reflect very strong C–D interactions. Concerning electronic transport properties, from p‐type when as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::126c4d0c3331d213693d0de4cf5f3be9
https://doi.org/10.1063/1.363060
https://doi.org/10.1063/1.363060
Autor:
M. Juhel, J.L. Benchimol, P. Launay, Bernard Sermage, Bernard Jusserand, F. Alexandre, R. Driad
Publikováno v:
Journal of Crystal Growth. 158:210-216
Carbon-doped GaAs epitaxial layers were grown by chemical beam epitaxy using trimethylgallium and arsine as growth precursors. The behaviour of incorporated hydrogen as a function of the carbon doping level, annealing conditions and growth temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::659f0106fe5028cad2a16b446d3e7639
https://doi.org/10.1016/0022-0248(95)00442-4
https://doi.org/10.1016/0022-0248(95)00442-4