Výsledky vyhledávání

Synthesis of crystallizable poly(behenyl methacrylate)-based block and statistical copolymers and their performance as wax crystal modifiers

Autor: Isabella R. Dorsman, Derek H. H. Chan, Victoria J. Cunningham, Steven L. Brown, Clive N. Williams, Spyridon Varlas, Steven P. Armes

Publikováno v: Polymer Chemistry. 13:5861-5872

Behenyl methacrylate-based diblock and statistical copolymers are evaluated as additives for the crystal habit modification of a model wax (n-octacosane) in n-dodecane. The statistical copolymers more strongly influence the wax crystal morphology.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::862393ecab244f94ea98a9672a89c4a4
https://doi.org/10.1039/d2py01023b

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Tuning the vesicle-to-worm transition for thermoresponsive block copolymer vesicles prepared via polymerisation-induced self-assembly

Autor: Clive N. Williams, Steven P. Armes, Matthew J. Derry, Isabella R. Dorsman, Victoria J. Cunningham, Steven L. Brown

Publikováno v: Polymer Chemistry. 12:1224-1235

We have previously reported the synthesis of thermoresponsive poly(stearyl methacrylate)-poly(benzyl methacrylate) [PSMA-PBzMA] diblock copolymer vesicles in mineral oil via polymerisation-induced self-assembly (PISA). Such vesicles undergo a vesicle

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1acf8b1ab8e900da62cef561c50d078f
https://doi.org/10.1039/d0py01713b

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Spreading of thin-film metal patterns deposited on nonplanar surfaces using a shadow mask micromachined in si (110)

Autor: Roald M. Tiggelaar, Johannes G.E. Gardeniers, R. Dorsman, Chris R. Kleijn, Johan W. Berenschot, Michael Curt Elwenspoek

Publikováno v: Journal of vacuum science and technology. B: Microelectronics and nanometer structures, 25(4), 1207-1216. American Institute of Physics

The application of a three dimensional, self-aligning shadow mask in (110)-oriented silicon for thin-film metal deposition is discussed. This shadow mask is used for the deposition of metal tracks on the bottom of structures with vertical sidewalls,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e03fc495945b07603a47a94851e87ec
https://doi.org/10.1116/1.2747629

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Multi-scale modeling of chemical vapor deposition processes for thin film technology

Autor: K.J. Kuijlaars, H. van Santen, R. Dorsman, M. Okkerse, Chris R. Kleijn

Publikováno v: Journal of Crystal Growth. 303:362-380

Chemical vapor deposition (CVD) process and equipment models aim at relating set macroscopic process conditions (such as the used gases and their respective flowrates, the operating pressure and temperature) to macroscopic and microscopic film proper

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5bac918eb6c70426b15cff2c4d07e551
https://doi.org/10.1016/j.jcrysgro.2006.12.062

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Zinc deposition experiments for validation of direct-simulation Monte Carlo calculations of rarefied internal gas flows

Autor: A. M. B. van Mol, J. F. M. Velthuis, Johannes Petrus Zijp, R. Dorsman, Chris R. Kleijn

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 25:474-479

Specially designed experiments were performed for the validation of direct simulation Monte Carlo calculations of rarefied internal gas flows. Hot zinc vapor was released into a cold-wall deposition chamber filled with a background gas at low pressur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb2b42cbfb4ac00263ae1e095d5214d6
https://doi.org/10.1116/1.2717191

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Numerical investigation of turbomolecular pumps using the direct simulation Monte Carlo method with moving surfaces

Autor: R. Dorsman, M. E. Roos, R. Versluis, L. Thielen

Publikováno v: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 3, 27, 543-547

A new approach for performing numerical direct simulation Monte Carlo (DSMC) simulations on turbomolecular pumps in the free molecular and transitional flow regimes is described. The chosen approach is to use surfaces that move relative to the grid t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::384b08c832a72b1a37c6a715935b04f0
http://resolver.tudelft.nl/uuid:97aaa7a7-52c3-43a5-b677-59ad82d5f376

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The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations

Autor: Chris R. Kleijn, A.P. Grzegorczyk, C.E.C. Dam, P.K. Larsen, P.R. Hageman, R. Dorsman

Publikováno v: Journal of Crystal Growth, 271, 192-199
Journal of Crystal Growth, 271, 1-2, pp. 192-199

In the study, presented in this paper, the growth of GaN layers by Hydride vapour phase epitaxy was investigated both experimentally and numerically. Modelling the flows in the reactor, combined with basic chemistry, gives a good approximation to the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb51b0d732bd1d07e982f61363bb6fdc
http://hdl.handle.net/2066/112597

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