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Publikováno v:
Clinical Genetics. 3:319-324
A study has been made of the presence of thyroid antibodies in the relatives of a random sample of elderly subjects, not selected on the basis of a thyroid disorder. The presence of antibodies was tested by the tanned red cell technique. The results
Publikováno v:
The Journal of Bone and Joint Surgery-American Volume. 84:1664-1667
Giant-cell tumor of the tendon sheath is a common lesion of the synovial membrane, and it frequently occurs in the hand. It is related to pigmented villonodular synovitis, has variable areas of involvement, and rarely causes osseous destruction 1. We
Publikováno v:
Solid State Communications. 88:943-946
From absorption, emission, luminescence excitation and electron spin orientation studies of undoped GaAs-AlxGa1−xAs superlattices we demonstrate the intrinsic nature of the radiative recombination process. This is in direct contrast to recombinatio
Autor:
Patrick R. Dingle, Lino Guzzella
Publikováno v:
Proceedings of the 2010 American Control Conference.
This paper presents and utilizes an optimal-control based method for quantifying the maneuverability of actively-controlled passenger vehicles during emergency highway-speed situations. The research is motivated by the desire to better understand the
Autor:
R. Dingle
Publikováno v:
Advances in Solid State Physics ISBN: 9783528080211
New effects associated with the quantization of confined carrier motion in ultrathin semiconductor heterostructures have recently been observed. Optical and electrical studies of molecular-beam grown AlxGa1−xAs-GaAs structures consisting of to 100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd117ab670f536f6c2ba3277605fa29
https://doi.org/10.1007/bfb0107373
https://doi.org/10.1007/bfb0107373
Autor:
Randy S. Schwartzberg, Sean R. Dingle
Publikováno v:
Arthroscopy: The Journal of Arthroscopic & Related Surgery. 20:e6-e7
Autor:
R. Dingle
Publikováno v:
C R C Critical Reviews in Solid State Sciences. 5:585-590
Publikováno v:
Journal of Applied Physics. 46:3059-3065
An isolated acceptor impurity is shown to be responsible for the ∼113‐meV deep luminescence band which is frequently seen in GaAs layers grown by molecular‐beam epitaxy. We establish that this center, which is also observed in melt‐grown and
Publikováno v:
Surface Science. 98:126-133
We have observed, by resonantly enhanced inelastic light scattering, intersubband excitations of the multilayer two dimensional electron gas in modulation doped GaAsAlGaAs heterojunction superlattices. The measured energies are in agreement with c