Zobrazeno 1 - 4
of 4
pro vyhledávání: '"R. Devenuto"'
Autor:
D. Katcoff, J. P. Silverman, B. Hill, A. D. Wilson, L. K. Wang, John Michael Warlaumont, Vincent Dimilia, Robert P. Rippstein, L. C. Hsia, R. Devenuto
Publikováno v:
Microelectronic Engineering. 9:101-104
Functional NMOS and CMOS circuits with fully-scaled 0.5 μm ground rules have been fabricated using synchroton radiation X-ray lithography for all device levels. The exposures were done at the VUV storage ring of the National Synchrotron Light Source
Autor:
L. K. Wang, H. Voelker, O. Vladimirsky, David E. Seeger, B. Hill, E. Petrillo, J. P. Silverman, C. Wasik, Raul E. Acosta, Robert P. Rippstein, R. Viswanathan, Karen Petrillo, John Michael Warlaumont, K. Kwietniak, D. Katcoff, R. Devenuto, Inna V. Babich, V. DiMilia, L. C. Hsia, S. Brodsky, A. D. Wilson
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:1662
High performance fully scaled 0.5 μm complementary metal–oxide semiconductors very large scale integrated (CMOS VLSI) circuits have been fabricated using synchrotron x‐ray lithography technology. X‐ray lithography is employed at all levels to
Autor:
R. Devenuto, V. DiMilia, D. Crockatt, D. Katcoff, J. P. Silverman, John Michael Warlaumont, K. Kwietniak, L. K. Wang, L. C. Hsia, A. D. Wilson, B. Hill, David E. Seeger, Robert P. Rippstein
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:2147
Functional, fully scaled n‐type metal–oxide semiconductor (NMOS) circuits with 0.5‐μm ground rules have been fabricated using synchrotron radiation x‐ray lithography for all device levels. The exposures were done at the vacuum ultraviolet st
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.