Zobrazeno 1 - 10
of 59
pro vyhledávání: '"R. Delsol"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
NPG Neurologie - Psychiatrie - Gériatrie. 8:23-29
Resume Les troubles de la memoire ne resument pas a eux seuls la maladie d’Alzheimer, d’autres troubles cognitifs sont presents en particulier les troubles des fonctions executives. Objectif Cette etude transversale vise a determiner l’importan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5c235dc9de95b511bf48d8e870875fa
https://doi.org/10.1016/j.npg.2008.01.010
https://doi.org/10.1016/j.npg.2008.01.010
Autor:
J. Guillan, Joaquim Torres, V. Girault, R. Gras, M. Hauschildt, E. Petitprez, P. Brun, M. Gall, E. Ollier, R. Delsol, L.G. Gosset
Publikováno v:
Microelectronic Engineering. 84:2629-2633
Integration of CoWP self-aligned barriers in hybrid stack with SiCN liner in a standard 65nm technology node integration scheme faces several issues. For example, bowing of upper metal level occurs due to the interaction between CoWP and etch plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6dbb18cfd4be80f99aa184cc7bc2c93
https://doi.org/10.1016/j.mee.2007.05.019
https://doi.org/10.1016/j.mee.2007.05.019
Autor:
Laurent-Luc Chapelon, P. Normandon, R. Delsol, Lucile Broussous, H. Chaabouni, M. Schellenberger, A. Ostrovski
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, 2007, pp.84 Issue: 11 (2007) 2719-2722
Microelectronic Engineering, Elsevier, 2007, pp.84 Issue: 11 (2007) 2719-2722
Microelectronic Engineering, 2007, pp.84 Issue: 11 (2007) 2719-2722
Microelectronic Engineering, Elsevier, 2007, pp.84 Issue: 11 (2007) 2719-2722
Residual gas analysis is a well-known technique used in the semi-conductor industry. This paper presents the RGA as an effective method to monitor wafer out-gassing during the degas process prior to barrier/copper seed deposition. The technique is ea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::872f0d04d35e18fe5b310fe70825ff7c
https://doi.org/10.1016/j.mee.2007.05.020
https://doi.org/10.1016/j.mee.2007.05.020
Autor:
L.L. Chapelon, Olivier Joubert, P. Brun, J. Vitiello, D. Fossati, H. Chaabouni, Thierry Chevolleau, R. Delsol, M. Aimadeddine, Vincent Arnal, Alexis Farcy, Joaquim Torres
Publikováno v:
Microelectronic Engineering. 84:2595-2599
Plasma ashing and etching integration steps on porous ultra low-k (ULK) have been investigated and are found to damage the porous dielectric structural and electrical properties, leading to weak performance and reliability. In order to overcome these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97fb989fb12b52ddd8193ae449f98acc
https://doi.org/10.1016/j.mee.2007.05.029
https://doi.org/10.1016/j.mee.2007.05.029
Autor:
P. Normandon, Xavier Federspiel, P. Vannier, V. Girault, J.P. Jacquemin, Magali Gregoire, R. Delsol, R. X. Bouyssou
Publikováno v:
Microelectronic Engineering. 83:2377-2380
Ta (N)/Ta bi-layer is a commonly used barrier in damascene copper interconnects for 90nm and 65nm technology nodes. A new barrier integration scheme so-called punch-through is currently used for 65nm node. The main feature of the new deposition schem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dc1a12aeb0e0580fa9f3568c87ea0e8
https://doi.org/10.1016/j.mee.2006.10.040
https://doi.org/10.1016/j.mee.2006.10.040
Publikováno v:
Microelectronic Engineering. 82:613-617
In the development of damascene copper interconnects for the 90 and 65nm technology nodes, several diffusion barriers were considered. Among barrier films a TaN/Ta bilayer is preferred because of its excellent adhesion to dielectrics and good barrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ef6743c372b97e3d90d8fcef3d9941a
https://doi.org/10.1016/j.mee.2005.07.065
https://doi.org/10.1016/j.mee.2005.07.065
Publikováno v:
Microelectronic Engineering. 50:75-80
Manufacturable etch processes for 0.18 μm technology TEOS bi-level contacts and vias (TEOS or TEOS/FOX/TEOS) are demonstrated in a low pressure high density reactor. Good CD control and high yields are demonstrated for structures down to 0.25 μm. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ebd2f72b761bbfafbbd4cf3634fa991
https://doi.org/10.1016/s0167-9317(99)00267-1
https://doi.org/10.1016/s0167-9317(99)00267-1
Publikováno v:
Thin Solid Films. 289:170-176
Experimental studies were performed to investigate the interaction of a silicon surface and the gaseous phase of a microwave multipolar plasma produced by distributed electron cyclotron resonance (MMP-DECR) using a TEOS-O2 mixture. Diagnostics of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9118e5649154d130728851770748c97
https://doi.org/10.1016/s0040-6090(96)08750-0
https://doi.org/10.1016/s0040-6090(96)08750-0
Publikováno v:
Journal of Applied Polymer Science. 61:2015-2022
Oxygen barrier coatings were made by plasma polymer deposition on a polypropylene substrate. Plasma polymer deposition is realized in a low-frequency reactor with hexamethyldisiloxane/oxygen (HMDSO/O2) precursors. The structure and composition of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b648d1bb1fc2602a6de594b9d225501
https://doi.org/10.1002/(sici)1097-4628(19960912)61:11<2015::aid-app16>3.0.co
https://doi.org/10.1002/(sici)1097-4628(19960912)61:11<2015::aid-app16>3.0.co