Zobrazeno 1 - 10
of 72
pro vyhledávání: '"R. Debrie"'
Publikováno v:
Journal of Optics. 27:183-190
In the stereo vision system, the key problem is a search problem which finds the corresponding pixels in the two stereoscopic images. These pixels must satisfy a very strict photometric constraint. In our approach, we use a special configuration of t
Publikováno v:
Pattern Recognition Letters. 17:457-466
We consider that the matching problem in a stereo vision process can be treated as the problem of finding an optimal path on a two-dimensional (2D) search plane. To obtain this path, we consider a non-linear gain function which varies as a function o
Publikováno v:
Materials Science and Engineering: B. 33:L1-L5
To obtain information about metallic contaminations, surface analytical techniques with an extremely low detection limit for the metal are necessary. In this paper, we show by using a comparative secondary ion mass spectrometry technique coupled with
Publikováno v:
Sensor Review. 15:17-20
Describes current research work into the design of a 3‐D vision sensor for use in the field of robot navigation and autonomous vehicles. Outlines the development of a stereo vision system which uses fast data processing to extract feature points in
Publikováno v:
Journal of Physics D: Applied Physics. 28:1562-1572
With increasing information flow, direct illumination of the photodiode intrinsic layer from the end of a fibre becomes a necessity. The active area size of the photodiode is much smaller than the spot size in the fibre. This paper proposes an optimi
Publikováno v:
Journal of Optics. 26:2-8
Analysing the polarization state of reflected beams in a vision system provides essential informations concerning the observed surface orientations. In this paper, we present an original 3-D surface reconstruction method based on this principle. The
Publikováno v:
Materials Science and Engineering: B. 28:383-386
This work introduces a comprehensive analytic model of the sputtering mechanism present in ion beam etching and reactive ion etching processes. Our final objective is to correlate the etch rate to the plasma reactor parameters. Experimental verificat
Publikováno v:
Journal of Physics D: Applied Physics. 26:2055-2060
Refractory ohmic contacts to n-type GaAs have been developed for heterojunction bipolar transistors (HBTS) processed with self-aligned technology and including high-temperature anneals. We report the results on W and MoGe deposition, annealing and th
Publikováno v:
Journal of Electronic Materials. 22:129-134
The use of rapid thermal annealing (RTA) techniques to anneal ion implanted GaAs compounds is expected to have a significant impact on device technology. Due to the short duration of the heat treatment, the implanted impurities may be activated witho
Publikováno v:
[1992] Proceedings of the IEEE International Symposium on Industrial Electronics.
An intelligent 3-D vision sensor is under development in the authors' laboratory for applications in robot guidance and autonomous vehicle control. The aim in this context is to compute a depth map from two images (512*512*8 bits) in less than 0.1 se