Zobrazeno 1 - 10
of 162
pro vyhledávání: '"R. Danielou"'
Publikováno v:
Physics Letters A
Physics Letters A, Elsevier, 1990, 147, pp.234-239
Physics Letters A, Elsevier, 1990, 147, pp.234-239
Ni-P alloys were formed by P ion implantation into pure Ni single crystals at low (15 K) and high (300 K) temperature up to a metalloid ion concentration (≈0.12) such that the fractions of amorphous volume obtained at the maximum disorder depth wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef40d8e715062fd4a264c3768a64a44a
https://doi.org/10.1016/0375-9601(90)90639-6
https://doi.org/10.1016/0375-9601(90)90639-6
Autor:
C. Chami, Y. Gobil, J. Fontenille, Guy Feuillet, Joel Cibert, Serge Tatarenko, R. Danielou, A. Ponchet, K. Saminadayar, E. Ligeon
Publikováno v:
Journal of Applied Physics. 67:2428-2433
Results concerning [111]CdTe growth on misoriented (001) GaAs substrates are presented and discussed. Growing CdTe on GaAs substrates with Ga steps results in twin‐free layers, which is not the case for As steps. The tilt of the (111) CdTe planes w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60f7981e30f0eaf07eec196728252fd3
https://doi.org/10.1063/1.345512
https://doi.org/10.1063/1.345512
Autor:
Matsota, Paraskevi1, Karalis, Vangelis2, Saranteas, Theodosios1, Kiospe, Fay2, Markantonis, Sophia Liberty2
Publikováno v:
Journal of Anaesthesiology Clinical Pharmacology. Apr-Jun2024, Vol. 40 Issue 2, p283-292. 10p.
Publikováno v:
Applied Physics. 25:57-63
The influence of surface orientation in Bi implanted silicon, annealed by Q-switched ruby laser pulse irradiation was investigated. Depth distributions and lattice location of the Bi atoms were obtained using4He backscattering and channeling techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45c64abd20623bb7b4c0cd9ac22c9b63
https://doi.org/10.1007/bf00935392
https://doi.org/10.1007/bf00935392
Publikováno v:
Thin Solid Films. 88:75-79
A nuclear technique is used to measure the crystal disorder produced by neon ion implantation in bubble garnets at a dose of 2 × 10 14 ions cm -2 . A procedure for etching the implanted layer with H 3 PO 4 at different depths followed by Rutherford
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e350aafc5262bc41c1ca2d15e519fc47
https://doi.org/10.1016/0040-6090(82)90352-2
https://doi.org/10.1016/0040-6090(82)90352-2
Autor:
R. Danielou, C. Jaouen, J.P. Rivière, F. Pons, Lionel Thomé, J. Delafond, E. Ligeon, J. Fontenille
Publikováno v:
Journal of Applied Physics. 65:1499-1504
Phase transformations induced by low‐temperature (15 K), heavy‐ (Xe) and light‐ (D) ion irradiation of a monocrystalline NiAl intermetallic compound are investigated via in situ Rutherford backscattering and channeling experiments. Total amorph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::474e44b04331856045c9ccf412da658a
https://doi.org/10.1063/1.342964
https://doi.org/10.1063/1.342964
Publikováno v:
Journal of Applied Physics. 63:722-725
The amorphous phase formation in Ni3B single crystals implanted at 15 K with deuterium ions is studied via in situ Rutherford backscattering and channeling experiments, and the lattice site of implanted deuterium was determined by using the D(3He,p)4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb361ed8ead222f440f56cc339f58684
https://doi.org/10.1063/1.340063
https://doi.org/10.1063/1.340063
Publikováno v:
Journal of Applied Physics. 53:5258-5264
〈100〉 samples of Si implanted with As (120 keV, 3×1015–1017 cm−2) and Bi ions (120 keV, 2×1014–3×1015 cm−2) have been annealed by a multiscan electron‐beam technique. Lattice reordering and impurity behavior have been studied by 4He
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::511dc09f62810edc664bd34a4066e315
https://doi.org/10.1063/1.331360
https://doi.org/10.1063/1.331360
Publikováno v:
Physical Review B. 23:6648-6667
The kinetic hydrogen exodiffusion and its temperature dependence in amorphous silicon prepared by glow discharge of silane has been studied using conductivity, electron paramagnetic resonance, $^{11}\mathrm{B}\ensuremath{\rightarrow}\ensuremath{\alph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13011d2425eba5aefcee6e6b3d8d8b74
https://doi.org/10.1103/physrevb.23.6648
https://doi.org/10.1103/physrevb.23.6648
Publikováno v:
Journal of Applied Physics. 59:108-119
The lattice location of deuterium has been investigated by channeling in fcc, hcp, and bcc metals. Implanted deuterium is studied in the range 15 K up to the release temperature and its site is compared to that of dissolved deuterium (α phase). Afte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::595711f3abf86388c5fba48a1b365ac6
https://doi.org/10.1063/1.336850
https://doi.org/10.1063/1.336850