Zobrazeno 1 - 10
of 248
pro vyhledávání: '"R. DAMMEL"'
Autor:
Ralph R. Dammel
Publikováno v:
Optical Microlithography XXXIV.
The extraordinary success story that is Moore’s Law required many technological components to come together at the right times. This tutorial will tell this story through the lens of one of the key components: the patterning materials, in particula
Publikováno v:
Journal of Photopolymer Science and Technology. 22:653-661
Cost reduction of Double Patterning processes is one of the key areas of development for materials vendors. Among the various possible approaches, spin-on freeze coatings are particularly attractive since they can provide a combination of high imagin
Publikováno v:
Journal of Photopolymer Science and Technology. 21:655-663
In this study we explore a novel resist freeze process for dual imaging with broad resist and lithography track compatibility. The Vapor Reaction Chamber (VRC) hardware is similar to a HMDS prime chamber. Freeze liquids are selected based on their ab
Autor:
Ralph R. Dammel, Takayuki Maehara, Srinivasan Chakrapani, Charito Antonio, Guanyang Lin, Takanori Kudo, Deepa Parthasarathy, Fimiaki Iwasaki, Clement Anyadiegwu, Shenggao Liu, Murirathna Padmanaban, Feederick Lam, Masao Yamaguchi
Publikováno v:
Journal of Photopolymer Science and Technology. 20:719-728
Novel diamantine monomers, 3-methyl-3-diamantyl methacrylate (MDiMA), 3-ethyl-3-diamantyl methacrylate (EDiMA), and 9-hydroxy-4-diamantyl methacrylate (HDiMA) were synthesized starting from diamantane. Free radical polymerizations of these monomers a
Autor:
Shinji Miyazaki, David J. Abdallah, Douglas Mckenzie, Ruzhi Zhang, Woo-Kyu Kim, Lyudmila Pylneva, Ralph R. Dammel, Dalil Rahman, Hengpeng Wu, P-H. Lu, M. Nisser, Alberto D. Dioses, Allen Timko, Frank Houlihan
Publikováno v:
Journal of Photopolymer Science and Technology. 20:697-705
New challenges face ArF bottom antireflection coatings (BARCs) with the implementation of high NA lithography and the concurrent increase use of spin-on hard masks. To achieve superior reflectivity control with high NA at least two semi-transparent A
Autor:
Timonthy A. Shedd, Dalil Rahman, Karen Turnquest, Andrew Romano, Georgia K. Rich, Simon Chiu, Munirathna Padmanaban, Guanyang Lin, Frank Houlihan, Scott D. Shuetter, Gregory A. Nellis, Allen Timko, Ralph R. Dammel
Publikováno v:
Journal of Photopolymer Science and Technology. 19:555-563
The performance of an experimental dry 193 nm photoresist, T83645, in dry an immersion applications is discussed. It is found that this resist exhibits good lithographic properties under both dry an immersion conditions and has no discernible impact
Autor:
Guanyang Lin, Francis M. Houlihan, Simon Chiu, Muthiah Thiyqarqjan, Dougls Mackenzie, Andrew Romano, Clement Anyadiegwu, Takanori Kudo, Allen G. Timko, David Rentkiewicz, Dalil Rahman, Rqlph R. Dammel, Murirathna Padmanaban
Publikováno v:
Journal of Photopolymer Science and Technology. 19:327-334
We will give an account of our investigation on structure property relationships of amines with regards to line width roughness (LWR) and line edge roughness (LER) of a 193 nm alicyclic-acrylate resist. Specifically, we have looked at basicity, molar
Autor:
Chisun Hong, David Rentkiewicz, Dongkwa Lee, Dalil Rahman, Murirathna Padmanaban, Raj Sakamuri, Ralph R. Dammel
Publikováno v:
Journal of Photopolymer Science and Technology. 18:451-456
Line-edge roughness (LER) & line-width roughness (LWR) poses serious problems for the device performance and CD error budget for sub 100nm design rules. Illumination conditions, pitch, resist formulations, resist process conditions, substrates have s