Zobrazeno 1 - 10
of 21
pro vyhledávání: '"R. D. Westbrook"'
Publikováno v:
Applied Physics Letters. 71:2812-2814
Homoepitaxial Si films doped both n- and p-type were deposited by molecular-jet chemical vapor deposition (CVD) from 10% Si2H6 in H2. Doping was accomplished from the background using PH3 for n-type and B2H6 for p-type. The dopant concentration was c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d1237711507b71dde55a3cd7efbf889
https://doi.org/10.1063/1.120194
https://doi.org/10.1063/1.120194
Publikováno v:
Physical Review B. 10:1623-1634
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25b2758e5174a3b7edcd77c410c47b09
https://doi.org/10.1103/physrevb.10.1623
https://doi.org/10.1103/physrevb.10.1623
Publikováno v:
Solar Cells. 1:145-148
Progress in the development of polycrystalline solar cells is hampered by the present poor state of knowledge about electronic and ionic processes at grain boundaries. A major difficulty in studying these processes is that conventional growth and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::576deb39343d9d41741d3aa0c35bf2df
https://doi.org/10.1016/0379-6787(80)90042-3
https://doi.org/10.1016/0379-6787(80)90042-3
Publikováno v:
Review of Scientific Instruments. 49:329-334
A variable time constant exponential pulse generator used to null exponential photoconductivity decay signals is described. Circuitry using this generator for the direct readout of minority carrier lifetime of semiconductors is also presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9beec4f95809accf1c245cf8c1f420bb
https://doi.org/10.1063/1.1135400
https://doi.org/10.1063/1.1135400
Publikováno v:
IEEE Transactions on Nuclear Science. 22:2289-2294
The purpose of these experiments was to formulate a better model for the structures of lattice defects and defect-impurity complexes in irradiated n-type Ge. Single crystals were grown by the Czochralski process from P, As, or Sb-doped melts, and ? 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff8d6dc79d503cb1627b465901e4142f
https://doi.org/10.1109/tns.1975.4328121
https://doi.org/10.1109/tns.1975.4328121
Autor:
R. T. Young, Jagdish Narayan, J. W. Cleland, R. D. Westbrook, R. F. Wood, P. M. Mooney, C. W. White
Publikováno v:
Radiation Effects. 47:41-44
The results of electrical measurements on Si implanted with n-type dopants such as P and As and laser annealed are presented. (GHT)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4579cadd5794260b7bec9759323c6ffe
https://doi.org/10.1080/00337578008209186
https://doi.org/10.1080/00337578008209186
Publikováno v:
Journal of the American Oil Chemists’ Society. 28:146-149
The results indicate that 9 to 10% moisture in the meats is the best level for the preparation of cottonseed into flakes for solvent extraction. At lower moisture the flakes contain more fines before and after agitation in solvent, and the percolatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffaa7ca01c854f81d092406871f9eabc
https://doi.org/10.1007/bf02612061
https://doi.org/10.1007/bf02612061
Publikováno v:
Journal of the American Oil Chemists’ Society. 24:228-236
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c778cd94c530b37e20e8dd121a084c7
https://doi.org/10.1007/bf02593200
https://doi.org/10.1007/bf02593200
Publikováno v:
Applied Physics Letters. 43:258-260
Time‐resolved reflectivity measurements have been used to determine both the time of onset‐of‐melting and the duration of melting resulting from frequency‐doubled neodymium: yttrium aluminum garnet (532 nm) pulsed‐laser irradiation of cryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1dcf63912474dae22a01c39306a7c19
https://doi.org/10.1063/1.94318
https://doi.org/10.1063/1.94318
Publikováno v:
Applied Physics Letters. 38:628-630
The effect of lithium on the electrical properties of polycrystalline silicon has been studied using scanning light spot and Hall‐effect measurements. It was found that the addition of lithium to polycrystalline silicon significantly improved the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12dae99622ae0014363ff567375c554d
https://doi.org/10.1063/1.92458
https://doi.org/10.1063/1.92458